RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HFM101W
THRU
HFM108W
SURFACE MOUNT
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
SMX
.209 (5.31)
.185 (4.70)
.110 (2.79)
.086 (2.18)
.091 (2.31)
.067 (1.70)
.071 (1.80)
.051 (1.30)
.010 (0.25)
.008 (0.20)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.011 (0.28)
.007 (0.18)
.180 (4.57)
.160 (4.06)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.059 (1.50)
.035 (0.89)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
o
at T
A
= 50 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
15
-65 to + 150
HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W
UNITS
Volts
Volts
Volts
Amps
Amps
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
12
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current, Full cycle Average T
A
= 55 C
o
Maximum DC Reverse Current at
@T
A
= 25 C
Rated DC Blocking Voltage
@T
A
= 125
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
3. ”Fully ROHS compliant”,”100% Sn plating (Pb free).
o
o
SYMBOL
V
F
I
R
trr
HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W
UNITS
Volts
uAmps
uAmps
uAmps
1.0
1.3
50
5.0
100
50
1.7
75
nSec
2005-10
RATING AND CHARACTERISTIC CURVES ( HFM101W THRU HFM108W )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
0
PULSE
GENERATOR
-0.25A
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
1.0
-1.0A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
1cm
SET TIME BASE FOR
10/20 ns/cm
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
100
10
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
TJ = 150
1.0
~H
FM
103
W
TJ = 100
101
W
HF
M1
1.0
.1
TJ = 25
HF
M
.1
.01
Pulse Width = 300uS
1% Duty Cycle
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
.001
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
50
40
30
20
10
0
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2
4
10 20 40
REVERSE VOLTAGE, ( V )
100
HFM
101
W
~HF
M10
5W
TJ = 25
HF
HFM
106
M
10
04
W
~H
FM
10
6W
5W
~H
FM
10
8W
TJ = 25
W~
HFM
108
W
RECTRON
微控制器 MCU
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