Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic envelope, featuring low
forward voltage drop, absence of
stored charge. and guaranteed
reverse surge capability. The devices
are intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
BYV143F series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
PARAMETER
BYV143F-
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
MAX.
35
35
0.62
20
MAX.
40
40
0.62
20
MAX.
45
45
0.62
20
UNIT
V
V
A
PINNING - SOT186
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1 2 3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-35
35
35
35
MAX.
-40
40
40
40
20
20
30
100
110
-45
45
45
45
UNIT
V
V
V
A
A
A
A
A
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
hs
≤
112 ˚C
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
square wave;
δ
= 0.5;
T
hs
≤
87 ˚C
I
2
t
I
RRM
I
RSM
T
stg
T
j
t = 25
µs; δ
= 0.5;
T
hs
≤
87 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal T
j
= 125 ˚C prior
to surge; with reapplied
V
RRM(max)
I
2
t for fusing
t = 10 ms
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode.
Non-repetitive peak reverse
t
p
= 100
µs
current per diode.
Storage temperature
Operating junction temperature
-
-
-
-65
-
50
1
1
175
150
A
2
s
A
A
˚C
˚C
August 1996
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
BYV143F series
TYP.
MAX.
1500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.7
4.8
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
C
d
PARAMETER
Forward voltage (per diode)
Reverse current (per diode)
Junction capacitance (per
diode)
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 20 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 125 ˚C
f = 1MHz; V
R
= 5V; T
j
= 25 ˚C to
125 ˚C
MIN.
-
-
-
-
-
TYP.
0.55
0.76
10
10
500
MAX.
0.62
0.80
200
30
-
UNIT
V
V
µA
mA
pF
August 1996
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV143F series
15
PF / W
Vo = 0.4200 V
Rs = 0.0120 Ohms
BYV143
Ths(max) / C
D = 1.0
0.5
64.5
100
10
IR / mA
BYV143
10
0.1
0.2
150 C
125 C
93
1
100 C
5
I
t
p
D=
t
p
T
t
121.5
0.1
0.01
75 C
Tj = 50 C
T
0
0
5
10
15
IF(AV) / A
20
150
25
0
25
VR/ V
50
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.44 V
Rs = 0.012 Ohms
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
12
10
BYV143F
2.2
2.8
4
Ths(max) / C
a = 1.57 81.6
1.9
93
104.4
115.8
127.2
138.6
150
15
Cd / pF
1000
PBYR745
8
6
4
2
0
100
10
1
10
VR / V
100
0
5
IF(AV) / A
10
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
IF / A
Tj = 25 C
Tj = 150 C
40
typ
BYV143
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
Zth j-hs (K/W)
10
max
1
30
20
0.1
10
P
D
t
p
t
0
0
0.2
0.4
0.6
VF / V
0.8
1
1.2
1.4
0.01
10us
1ms
tp (s)
0.1s
10s
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
August 1996
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV143F series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
M
2
3
0.9
0.7
2.54
5.08
top view
1.3
0.55 max
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BYV143F series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.100
嵌入式系统
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