®
BYV 10-60
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glass case featu-
ring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high fre-
quency circuits.
DO 41
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(AV)
I
FSM
Parameter
Repetitive Peak Reverse Voltage
Average Forward Current*
Surge non Repetitive Forward Current
T
amb
= 25
°C
T
amb
= 25°C
t
p
= 10ms
T
amb
= 25°C
t
p
= 300µs
T
stg
T
j
T
L
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Value
60
1
20
Sinusoidal Pulse
40
Rectangular Pulse
- 65 to + 150
- 65 to + 125
230
°C
°C
°C
Unit
V
A
A
THERMAL RESISTANCE
Symbol
R
th(j-a)
Junction-ambient*
Test Conditions
Value
110
Unit
°C/W
* On infinite heatsink with 4mm lead length
August 1999 Ed: 1A
1/4
BYV 10-60
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F
*
I
F
= 1A
I
F
= 3A
T
j
= 25°C
Test Conditions
V
R
= V
RRM
Min.
Typ.
Max.
0.5
10
0.7
1
V
Unit
mA
DYNAMIC CHARACTERISTICS
Symbol
C
T
j
= 25°C
T
j
= 25°C
* Pulse test: t
p
≤
300µs
δ <
2%.
Test Conditions
V
R
= 0
V
R
= 5V
Min.
Typ.
150
40
Max.
Unit
pF
Forward current flow in a schottky rectifier is due to
majority carrier conduction. So reverse recovery is
not affected by stored charge as in conventional PN
junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
Figure 1. Forward current versus forward
voltage at low level (typical values).
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
schottky rectifier consists of an ideal diode in paral-
lel with a variable capacitance equal to the junction
capacitance (see fig. 5 page 4/4).
Figure 2. Forward current versus forward
voltage at high level (typical values).
2/4
BYV 10-60
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
RRM
in per
cent.
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values).
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t
≤
10 ms.
3/4
BYV 10-60
Figure 7. Surge non repetitive forward current
versus number of cycles.
PACKAGE MECHANICAL DATA
DO 41 Glass
DIMENSIONS
B
note 1 E
A
B
E note 1
/
O
C
REF.
Millimeters
Min.
Max.
5.20
2.71
Inches
Min.
0.160
0.080
1.102
Max.
0.205
0.107
A
B
/
O
D
note 2
4.07
2.04
28
0.712
C
O
D
/
D
0.863
0.028
0.034
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.34g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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