Doc No.
TT4-EA-10241
Revision.
2
Product Standards
MOS FET
MTM982400BBF
MTM982400BBF
Silicon N-channel MOSFET
Unit: mm
For switching
8
5.0
0.4
7
6
5
0.22
Low drain-source On-state Resistance
RDS(on) typ = 29 m (VGS = 5.0 V)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
3
4
5.0
6.0
0.95
1.27
Features
Marking Symbol:
CA
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
4.
Source
Source
Source
Gate
5.
6.
7.
8.
Drain
Drain
Drain
Drain
Panasonic
JEITA
Code
SO8-F1-B
SC-111AA
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Drain Current
Drain Current (Pulsed)
Total Power dissipation
*1
Channel Temperature
Operating Ambient Temperature
Storage Temperature Range
Note:
Rating
40
20
7
28
2
150
-40 to + 85
-55 to +150
Unit
V
V
A
A
W
C
C
C
Internal Connection
(D)
8
(D)
7
(D)
6
(D)
5
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
*1 Measuring on ceramic board at 50 mm
50 mm
1.0 mm.
1
(S)
2
(S)
3
(S)
4
(G)
Pin Name
1.
2.
3.
4.
Source
Source
Source
Gate
5.
6.
7.
8.
Drain
Drain
Drain
Drain
Page 1 of 6
Established : 2007-12-18
Revised
: 2013-09-10
Doc No.
TT4-EA-10241
Revision.
2
Product Standards
MOS FET
MTM982400BBF
Electrical Characteristics Ta = 25C
3C
Static Characteristics
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source threshold Voltage
Drain-source On-state Resistance
Forward transfer admittance
*1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
*1,*2
Rise Time
*1,*2
Turn-off Delay Time
*1,*2
Fall Time
*1,*2
Note:
*1
Conditions
ID = 1 mA, VGS = 0 V
VDS = 40 V, VGS = 0 V
VGS =
16
V, VDS = 0 V
ID = 1.0 mA, VDS = 10.0 V
RDS(on)1
ID = 7 A, VGS = 10 V
RDS(on)2
ID = 3.5 A, VGS = 5.0 V
|Yfs|
ID = 7 A, VDS = 10 V
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Coss
Crss
td(on) VDD = 25 V, VGS = 0 to 10 V,
ID = 3.5 A
tr
td(off) VDD = 25 V, VGS = 10 to 0 V,
ID = 3.5 A
tf
VDSS
IDSS
IGSS
Vth
Min
40
Typ
Max
10
10
2.5
23
40
1.0
16
29
4.0
1 750
150
90
17
9
94
33
Unit
V
A
A
V
m
S
pF
ns
ns
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2 of 6
Established : 2007-12-18
Revised
: 2013-09-10
Doc No.
TT4-EA-10241
Revision.
2
Product Standards
MOS FET
MTM982400BBF
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
VDD = 25 V
Vin
10V
PW = 10μs
D.C.
1 %
ID = 3.5 A
RL = 7.1
Vout
D
0V
Vin
G
50
S
90 %
Vin
10 %
90 %
Vout
10 %
90 %
10 %
td(on)
tr
t d(off)
tf
Page 3 of 6
Established : 2007-12-18
Revised
: 2013-09-10
Doc No.
TT4-EA-10241
Revision.
2
Product Standards
MOS FET
MTM982400BBF
Technical Data ( reference )
ID - VDS
6
10.0 V
ID - VGS
2
Ta = 85
℃
Drain current ID (A)
1.5
25
℃
1
-40
℃
0.5
Drain Current ID (A)
5
4
5.0 V
3
2
1
0
0
0.1
0.2
3.5 V
4.0 V
VGS = 3.0 V
0
0.3
0.4
0.5
0
1
2
3
4
5
Drain-source Voltage VDS (V)
Gate-source voltage VGS (V)
VDS - VGS
0.4
RDS(on) - ID
Drain-source On-state Resistance
RDS(on) (m)
100
5.0 V
Drain-source Voltage VDS (V)
ID = 7.0 A
0.3
VGS = 10.0 V
0.2
3.5 A
0.1
1.75 A
0
0
2
4
6
8
10
10
1
1
10
Gate-source Voltage VGS (V)
Drain Current ID (A)
Capacitance - VDS
Gate-source Voltage VGS (V)
10000
Ciss
Capacitance C (pF)
1000
Coss
100
Crss
10
Dynamic Input/Output Characteristics
5
4
3
2
1
0
0
5
10
15
20
Total Gate Charge Qg (nC)
VDD = 20 V
1
0.1
1
10
100
Drain-source Voltage VDS (V)
Page 4 of 6
Established : 2007-12-18
Revised
: 2013-09-10
Doc No.
TT4-EA-10241
Revision.
2
Product Standards
MOS FET
MTM982400BBF
Technical Data ( reference )
Vth - Ta
2.5
Gate-source Threshold Voltage
Vth (V)
RDS(on) - Ta
50
Drain-source On-resistance
RDS(on) (mΩ)
2
1.5
1
0.5
0
-50
0
50
Temperature (℃)
40
30
20
VGS = 5.0 V
10.0 V
10
0
100
150
-50
0
50
Temperature (℃)
100
150
PD - Ta
Total Power Dissipation PD (W)
3
2.5
2
1.5
1
0.5
0
0
50
100
150
Temperature Ta (C)
Measuring on ceramic board
at 50 mm
50 mm
1.0 mm
Rth - tsw
Thermal Resistance Rth (C/W)
1000
100
Safe Operating Area
IDp = 28 A
Drain current ID (A)
100
10
1 ms
10
1
Operation in this area
is limited by RDS(on)
10 ms
100 ms
1s
1
0.1
Ta = 25 °C, Glass epoxy board
(25.4
25.4
t0.8 mm) coated with copper foil,
which has more than 300 mm
2
.
DC
0.1
0.01
0.1
1
10
100
1000
0.01
0.01
0.1
1
10
100
Pulse Width tsw (s)
Drain-source voltage VDS (V)
Page 5 of 6
Established : 2007-12-18
Revised
: 2013-09-10
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
