Freescale Semiconductor
Technical Data
Document Number: MRFE6VP61K25H
Rev. 4.1, 3/2014
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: V
DD
= 50 Volts, I
DQ
= 100 mA
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
CW
P
out
(W)
1250 Peak
1250 CW
f
(MHz)
230
230
G
ps
(dB)
24.0
22.9
D
(%)
74.0
74.6
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
1.8-
-600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Application Circuits
(1)
— Typical Performance
Frequency
(MHz)
27
40
81.36
87.5--108
144--148
170--230
352
Signal Type
CW
CW
CW
CW
CW
DVB--T
Pulse
(200
sec,
20% Duty Cycle)
CW
CW
P
out
(W)
1300
1300
1250
1100
1250
225
1250
G
ps
(dB)
27
26
27
24
26
25
21.5
D
(%)
81
85
84
80
78
30
66
NI-
-1230S-
-4S
MRFE6VP61K25HSR5
NI-
-1230H-
-4S
MRFE6VP61K25HR6/R5
352
500
1150
1000
20.5
18
68
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
out
(W)
1500 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
NI-
-1230GS-
-4L
MRFE6VP61K25GSR5
Gate A 3
1 Drain A
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 V
DD
Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistors.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2010--2014. All rights reserved.
MRFE6VP61K25HR6
MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
--0.5, +133
--6.0, +10
-- 65 to +150
150
225
1333
6.67
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 63C, 1250 W CW, I
DQ
= 100 mA, 230 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 66C, 1250 W Pulse, 100
sec
Pulse Width, 20% Duty Cycle,
I
DQ
= 100 mA, 230 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.15
0.03
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 3500 V
B, passes 250 V
IV, passes 4000 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 1776
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 30 Adc)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.8
185
562
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.7
1.9
—
—
2.2
2.2
0.15
28.0
2.7
2.9
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
133
—
—
—
—
—
—
1
—
10
20
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA, P
out
= 1250 W Peak (250 W Avg.),
f = 230 MHz, 100
sec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
23.0
72.5
—
24.0
74.0
--14
26.0
—
--10
dB
%
dB
Table 5. Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
out
(W)
1500 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C10
C11 C12
C13
C22
C23
C21
COAX1
R1
COAX3
L3
C16
C2 C4
L1
C5
L2
C14
C15
C17
CUT OUT AREA
C1
C3
C18
C19
COAX2
R2
L4
COAX4
C25
C6
C7 C8
C9
MRFE6VP61K25H
Rev. 3
C26
--
C27
Figure 2. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Layout — Pulse
Table 6. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Designations and Values — Pulse
Part
C1
C2, C3, C5
C4
C6, C10
C7, C11
C8, C12
C9, C13, C21, C25
C14
C15
C16, C17, C18, C19
C20
C22, C23, C24, C26, C27, C28
Coax1, 2, 3, 4
L1, L2
L3, L4
R1, R2
PCB
Description
20 pF Chip Capacitor
27 pF Chip Capacitors
0.8--8.0 pF Variable Capacitor, Gigatrim
22
F,
35 V Tantalum Capacitors
0.1
F
Chip Capacitors
220 nF Chip Capacitors
1000 pF Chip Capacitors
43 pF Chip Capacitor
75 pF Metal Mica
240 pF Chip Capacitors
6.2 pF Chip Capacitor
470
F,
63 V Electrolytic Capacitors
25
Semi Rigid Coax, 2.2 Shield Length
5 nH Inductors
6.6 nH Inductors
10
Chip Resistors
0.030,
r
= 2.55
Part Number
ATC100B200JT500XT
ATC100B270JT500XT
27291SL
T491X226K035AT
CDR33BX104AKYS
C1812C224K5RACTU
ATC100B102JT50XT
ATC100B430JT500XT
MIN02--002EC750J--F
ATC100B241JT200XT
ATC100B6R2BT500XT
MCGPR63V477M13X26--RH
UT--141C--25
A02TKLC
GA3093--ALC
CRCW120610R0JNEA
AD255A
Manufacturer
ATC
ATC
Johanson
Kemet
AVX
Kemet
ATC
ATC
CDE
ATC
ATC
Multicomp
Micro--Coax
Coilcraft
Coilcraft
Vishay
Arlon
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
4
RF Device Data
Freescale Semiconductor, Inc.
--
--
--
C24
C20
C28
V
BIAS
L3
C21
C22
C23
C24
C10
Z19
COAX1
Z17
Z15
C17
Z29
DUT
C14
C15
C20
Z16
Z22
Z18
COAX2
Z20
L4
C7
C8
C9
+
+
+
C25
C26
C27
C28
V
SUPPLY
V
BIAS
+
C6
R2
Z24
Z26
C18
C19
COAX4
Z28
Z14
L2
Z12
Z21
Z23
Z25
C16
Z27
COAX3
Z11
Z3
Z5
Z7
C4
Z6
C3
Z8
Z10
C5
Z9
C2
Z4
L1
Z2
C1
Z13
R1
C11
C12
C13
RF Device Data
Freescale Semiconductor, Inc.
V
SUPPLY
+
+
+
RF
OUTPUT
Z30
RF
INPUT
Z1
Figure 3. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Schematic — Pulse
Table 7. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Microstrips — Pulse
Description
0.192
0.082 Microstrip
0.175
0.082 Microstrip
0.170
0.100 Microstrip
0.116
0.285 Microstrip
0.116
0.285 Microstrip
0.108
0.285 Microstrip
Microstrip
Z11*, Z12*
Z13, Z14
Z15, Z16
Z17*, Z18*
Z19*, Z20*
Z21, Z22
Description
0.872
0.058 Microstrip
0.412
0.726 Microstrip
0.371
0.507 Microstrip
0.466
0.363 Microstrip
0.187
0.154 Microstrip
0.104
0.507 Microstrip
Microstrip
Z23, Z24
Z25, Z26
Z27, Z28
Z29
Z30
Description
1.251
0.300 Microstrip
0.127
0.300 Microstrip
0.116
0.300 Microstrip
0.186
0.082 Microstrip
0.179
0.082 Microstrip
* Line length includes microstrip bends
Microstrip
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
5
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