Freescale Semiconductor
Technical Data
Document Number: MRFG35010AN
Rev. 4, 8/2013
Gallium Arsenide pHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
customer premise equipment (CPE) applications.
Typical Single--Carrier W--CDMA Performance: V
DD
= 12 Vdc, I
DQ
= 130 mA,
3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Frequency
(MHz)
750
2140
2650
P
out
(W)
1
1
1
G
ps
(dB)
14.5
13.0
11.5
ACPR
(dBc)
--44.0
--43.0
--43.0
D
(%)
24.0
25.0
30.0
IRL
(dB)
--15
--14
--15
MRFG35010ANT1
500-
-5000 MHz, 9 W, 12 V
POWER FET
GaAs pHEMT
Features
9 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Efficiency and High Linearity
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel.
PLD-
-1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Symbol
V
DSS
V
GS
P
in
T
stg
T
ch
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77C, 1 W CW
Symbol
R
JC
Value
15
--5
33
--65 to +150
175
Unit
Vdc
Vdc
dBm
C
C
Table 2. Thermal Characteristics
Value
(2)
6.5
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
1. For reliable operation, the operating channel temperature should not exceed 150C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2006, 2008--2009, 2012--2013. All rights reserved.
MRFG35010ANT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= --0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= --2.2 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= --2.5 Vdc)
Gate--Source Cut--off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
DQ
= 180 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
Min
—
—
—
—
--1.2
--1.2
Typ
2.9
<1
0.1
2
--1.0
--0.95
Max
—
100
1
15
--0.7
--0.7
Unit
Adc
Adc
mAdc
mAdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 12 Vdc, I
DQ
= 130 mA, P
out
= 1 W Avg., f = 3550 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
G
ps
η
D
ACPR
9
23
—
10
25
--43
—
—
--40
dB
%
dBc
Typical RF Performance
(In Freescale Test Fixture, 50
hm
system) V
DD
= 12 Vdc, I
DQ
= 130 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
9
—
W
MRFG35010ANT1
2
RF Device Data
Freescale Semiconductor, Inc.
C11
C10
C9
C14
C8
C7
C6
C5
C13
C12
C15
C16
C17
C18
C19
R1
C3
C20
C4
C1
C2
C22
C21
MRFG35010AN
Rev. 6
3500MHz -- 3600MHz
Figure 1. MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz
Table 6. MRFG35010ANT1 Test Circuit Component Designations and Values — 3550 MHz
Part
C1, C21, C22
C2
C3
C4, C19, C20
C5, C18
C6, C17
C7, C16
C8, C15
C9, C14
C10, C13
C11, C12
R1
PCB
Description
0.5 pF Chip Capacitors
0.2 pF Chip Capacitor
0.5 pF Chip Capacitor
6.8 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
F
Chip Capacitors
39K pF Chip Capacitors
10
F,
50 V Chip Capacitors
50
Chip Resistor
0.020,
r
= 3.5
Part Number
08051J0R5BBT
06035J0R2BBT
06035J0R5BBT
08051J6R8BBT
ATC100A100JP150XT
ATC100A101JP150XT
ATC100B101JP500XT
ATC100B102JP50XT
CDR33BX104AKWS
ATC200B393KP50XT
GRM55DR61H106KA88B
P51ETR--ND
RO4350B
Manufacturer
AVX
AVX
AVX
AVX
ATC
ATC
ATC
ATC
Kemet
ATC
Murata
Newark
Rogers
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
3
V
GG
C11
C10
C9
C8
C7
C6
C5
C4
Z9
R1
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
C3
C1
C2
C22
C21
Z6
Z7
Z8
Z10 Z11
Z13
Z14
Z15
Z16
C20
Z17
C19
Z12
C18
C17
C16
C15
C14
C13
C12
V
DD
RF
INPUT
Figure 2. MRFG35010ANT1 Test Circuit Schematic — 3550 MHz
Table 7. MRFG35010ANT1 Test Circuit Microstrips — 3550 MHz
Microstrip
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z10
Description
0.045 x 0.689 Microstrip
0.045 x 0.089 Microstrip
0.020 x 0.360 Microstrip
0.045 x 0.029 Microstrip
0.045 x 0.061 Microstrip
0.045 x 0.055 Microstrip
0.300 x 0.125 Microstrip
0.146 x 0.070 Microstrip
Microstrip
Z9
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Description
0.025 x 0.485 Microstrip
0.400 x 0.215 Microstrip
0.025 x 0.497 Microstrip
0.025 x 0.271 Microstrip
0.025 x 0.363 Microstrip
0.025 x 0.041 Microstrip
0.045 x 0.050 Microstrip
0.045 x 0.467 Microstrip
MRFG35010ANT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 3550 MHz
12
G
T
, TRANSDUCER GAIN (dB)
10
8
6
4
2
V
DD
= 12 Vdc, I
DQ
= 130 mA, f = 3550 MHz
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
S
= 0.875
--131.0_
L
= 0.849
--145.8_
G
T
50
40
30
20
10
0
40
D
, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
D
10
15
20
25
30
35
P
out
, OUTPUT POWER (dBm)
Figure 3. Single-
-Carrier W-
-CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--10
--20
--30
--40
--50
--60
15
20
25
30
35
P
out
, OUTPUT POWER (dBm)
--10
--15
--20
--25
--30
--35
40
V
DD
= 12 Vdc, I
DQ
= 130 mA, f = 3550 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
S
= 0.875
--131.0_,
L
= 0.849
--145.8_
IRL
ACPR
Figure 4. Single-
-Carrier W-
-CDMA ACPR and
Input Return Loss versus Output Power
NOTE:
All data is referenced to package lead interface.
S
and
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010ANT1
RF Device Data
Freescale Semiconductor, Inc.
5
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