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MRF6V3090NBR1: 产品描述transistors RF mosfet vhv6 860mhz 90w TO 272wb4; 产品类别半导体分立半导体; 文件大小937KB，共19页; 制造商FREESCALE (NXP); 标准

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transistors RF mosfet vhv6 860mhz 90w TO 272wb4

参数名称	属性值
Manufacture	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Single
Transistor Polarity	N-Channel
频率 Frequency	0.47 GHz to 0.86 GHz
Gai	22 dB
Output Powe	18 W
Vds - Drain-Source Breakdown Voltage	115 V
Vgs - Gate-Source Breakdown Voltage	10 V
最大工作温度 Maximum Operating Temperature	+ 150 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TO-270-4 WB
系列 Packaging	Reel
工厂包装数量 Factory Pack Quantity	500
Vgs th - Gate-Source Threshold Voltage	2.4 V
Unit Weigh	2 g

	MRF6V3090NBR1	MRF6V3090NBR5	MRF6V3090NR5	MRF6V3090NR1
描述	transistors RF mosfet vhv6 860mhz 90w TO 272wb4	transistors RF mosfet vhv6 860mhz 90w TO 272wb4	transistors RF mosfet vhv6 860mhz 90w TO 270wb4	transistors RF mosfet vhv6 860mhz 90w TO 270wb4
Manufacture	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET
RoHS	Yes	Yes	Yes	Yes
Configurati	Single	Single	Single	Single
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel
频率 Frequency	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz
Gai	22 dB	22 dB	22 dB	22 dB
Output Powe	18 W	18 W	18 W	18 W
Vds - Drain-Source Breakdown Voltage	115 V	115 V	115 V	115 V
Vgs - Gate-Source Breakdown Voltage	10 V	10 V	10 V	10 V
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	TO-270-4 WB	TO-270-4 WB	TO-272-4 WB EP	TO-272-4 WB EP
系列 Packaging	Reel	Reel	Reel	Reel
工厂包装数量 Factory Pack Quantity	500	50	50	500
Vgs th - Gate-Source Threshold Voltage	2.4 V	2.4 V	2.4 V	2.4 V
Unit Weigh	2 g	2 g	1.646 g	1.646 g

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