BYT 11-600
→1000
FAST RECOVERY RECTIFIER DIODES
SOFT RECOVERY
VERY HIGH VOLTAGE
SMALL RECOVERY CHARGE
APPLICATIONS
ANTISATURATION DIODES FOR TRANSIS-
TOR BASE DRIVE
SNUBBER DIODES
ABSOLUTE RATINGS
(limiting values)
Symbol
I
FRM
I
F (AV)
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetive Peak Forward Current
Average Forward Current *
Surge non Repetitive Forward Current
Power Dissipation *
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
t
p
≤
20µs
T
a =
75°C
δ
= 0.5
t
p
= 10ms
Sinusoidal
T
a
= 55°C
F 126
(Plastic)
Value
20
1
35
1.25
- 55 to + 150
- 55 to + 150
230
Unit
A
A
A
W
°C
°C
Symbol
V
RRM
Parameter
600
Repetitive Peak Reverse Voltage
600
BYT 11-
800
800
1000
1000
Unit
V
THERMAL RESISTANCE
Symbol
R
th (j - a)
Junction-ambient*
Parameter
Value
60
Unit
°C/W
* On infinite heatsink with 10mm lead length.
November 1994
1/4
BYT11-600
→
1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
I
R
V
F
T
j
= 25°C
T
j
= 25°C
Test Conditions
V
R
= V
RRM
I
F
= 1A
Min.
Typ.
Max.
20
1.3
Unit
µA
V
RECOVERY CHARACTERISTICS
Symbol
t
rr
T
j
= 25°C
Test Conditions
I
F
= 0.5A
I
R
= 1A
I
rr
= 0.25A
Min.
Typ.
Max.
100
Unit
ns
To evaluate the conduction losses use the following equations:
V
F
= 1.1 + 0.075 I
F
P = 1.1 x I
F(AV)
+ 0.075 I
F2(RMS)
F i gu re 1. Ma xi mu m av era ge power
dissipation versus average forward current.
Figure 2. Average forward current versus
ambient temperature.
Figure 3. Thermal resistance versus lead
length.
Mounting n°1
INFINITE HEATSINK
Mounting n°2
PRINTED CIRCUIT
Test point of
t
lead
Soldering
2/4
BYT 11-600
→
1000
Figure 5. Peak forward current
versus peak forward voltage drop
(maximum values).
Figure 4. Transient thermal impedance
junction-ambient for mounting n°2 versus
pulse duration (L = 10 mm).
Figure 6. Capacitance versus reverse applied
voltage
Figure 7. Non repetitive surge peak current
versus number of cycles
3/4
BYT11-600
→
1000
PACKAGE MECHANICAL DATA
F 126 (Plastic)
B
note 1 E
A
B
E note 1
/
O
C
/
O
D
note 2
O
D
/
DIMENSIONS
REF.
A
B
∅
C
∅
D
E
Millimeters
Min.
6.05
26
2.95
0.76
3.05
0.86
1.27
Max.
6.35
Inches
Min.
0.238
1.024
0.116
0.029
0.120
0.034
0.050
Max.
0.250
NOTES
1 - The lead diameter
∅
D is not controlled over zone E
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
Cooling method: by convection (method A)
Marking: type number ring at cathode end
Weight: 0.4g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.
4/4
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