®
BYT08P-400
BYT08PI-400
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
trr (max)
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: TO-220AC
Insulation voltage: 2500 V
RMS
Capacitance = 7 pF
DESCRIPTION
This single rectifier is suited for Switch Mode
Power Supplies and other power converters.
This device is intended to free-wheeling function in
converters and motor control circuits.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
RMS forward current
Average forward current
TO-220AC
Insulated
TO-220AC
I
FSM
T
stg
Tj
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Tc = 120°C
δ
= 0.5
Tc = 105°C
100
- 40 to + 150
150
A
°C
°C
tp=5
µs
F=5kHz
Value
400
200
16
8
Unit
V
A
A
A
8A
400 V
1.4 V
35 ns
A
K
A
K
T0-220AC
(Plastic)
Insulated
TO-220AC
(Plastic)
tp = 10 ms Sinusoidal
October 1999 - Ed: 3A
1/7
BYT08P-400 / BYT08PI-400
THERMAL RESISTANCES
Symbol
R
th (j-c)
Parameter
Junction to case
TO-220AC
Ins. TO-220AC
Value
2.5
3.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
*
I
R
**
Parameter
Forward voltage drop
Reverse leakage
current
Test Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
V
R
= V
RRM
I
F
= 8 A
Min.
Typ.
Max.
1.5
1.4
15
2.5
µA
mA
Unit
V
Pulse test : * tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.024 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
t
rr
Test Conditions
Tj = 25°C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/µs
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
t
IRM
I
RM
Parameter
Maximum reverse
recovery time
Maximum reverse
recovery current
Turn-off overvoltage
coefficient
Test Conditions
dI
F
/dt = - 32 A/µs
dI
F
/dt = - 64 A/µs
dI
F
/dt = - 32 A/µs
dI
F
/dt = - 64 A/µs
V
CC
= 200 V
I
F
= 8 A
L
p
≤
0.05
µH
Tj = 100°C
(see fig. 13)
Min. Typ. Max. Unit
75 ns
50
2.2
2.8
3.3
/
A
Min.
Typ.
Max.
75
35
Unit
ns
C=
V
RP
V
CC
Tj = 100°C V
CC
= 60V
I
F
= I
F(AV)
dI
F
/dt = - 30A/µs
L
p
= 1µH
2/7
BYT08P-400 / BYT08PI-400
Fig. 1:
Average forward power dissipation versus
average forward current .
PF(av)(W)
14
12
10
8
6
4
2
0
0
1
2
3
4
IF(av) (A)
5
6
7
δ
=tp/T
T
Fig. 2:
Peak current versus form factor.
IM(A)
δ
= 0.1
δ
= 0.05
δ
=1
δ
= 0.2
δ
= 0.5
tp
8
9
10
100
90
80
70
60
50
40
30
20
10
0
0.0
P=5W
T
δ
=tp/T
tp
P=10W
P=20W
0.1
0.2
0.3
0.4
δ
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
10
9
8
7
6
5
4
3
2
1
0
Rth(j-a)=Rth(j-c)
Non insulated
Insulated
Rth(j-a)=15°C/W
T
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
0
25
Fig. 4-1:
Non repetitive surge peak forward current
versus overload duration (TO-220AC).
Fig. 4-2:
Non repetitive surge peak forward current
versus overload duration (insulated TO-220AC).
IM(A)
100
90
80
70
60
50
40
30
I
M
20
10
0
1E-3
IM(A)
90
80
70
60
50
40
30
20
10
0
1E-3
Tc=25°C
Tc=50°C
Tc=50°C
Tc=25°C
Tc=75°C
t
I
M
t
Tc=75°C
δ
=0.5
δ
=0.5
t(s)
1E-2
1E-1
1E+0
t(s)
1E-2
1E-1
1E+0
3/7
BYT08P-400 / BYT08PI-400
Fig. 5:
Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 6:
Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Typical values
Tj=100°C
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
δ
= 0.5
10.0
δ
= 0.2
Tj=25°C
δ
= 0.1
0.2
Single pulse
T
1.0
Tj=100°C
tp(s)
0.1
1E-3
1E-2
1E-1
δ
=tp/T
tp
VFM(V)
1E+0
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
30
28
26
24
22
20
18
16
14
12
10
Fig. 8:
Recovery charges versus dI
F
/dt (per diode).
Qrr(nC)
250
F=1MHz
Tj=25°C
IF=IF(av)
90% confidence
Tj=100°C
200
150
100
50
VR(V)
1
10
100
200
0
10
20
dIF/dt(A/µs)
50
100
200
Fig. 9:
Recovery current versus dI
F
/dt (per diode).
Fig. 10:
Transient peak forward voltage versus
dI
F
/dt (per diode)
VFP(V)
30
IF=IF(av)
90% confidence
Tj=100°C
IRM(A)
10
8
6
4
2
dIF/dt(A/µs)
IF=IF(av)
90% confidence
Tj=100°C
25
20
15
10
5
dIF/dt(A/µs)
0
10
20
50
100
200
0
0
100
200
300
400
500
4/7
BYT08P-400 / BYT08PI-400
Fig. 11:
Forward recovery time versus dI
F
/dt (per
diode)
Fig. 12:
Dynamic parameters versus junction
temperature.
tfr(µs)
1.50
1.25
1.00
0.75
0.50
0.25
dIF/dt(A/µs)
IF=IF(av)
90% confidence
Tj=100°C
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
0.75
0.50
IRM
Qrr
Tj(°C)
0.00
0
100
200
300
400
500
0.25
0
25
50
75
100
125
150
Fig. 13:
Turn-off switching characteristics (without series inductance).
Fig. 14:
Turn-off switching characteristics (with series inductance).
5/7
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