RDN050N20
Transistors
10V Drive Nch MOS FET
RDN050N20
Structure
Silicon N-channel
MOS FET
External dimensions
(Unit : mm)
TO-220FN
10.0
4.5
φ
3.2
2.8
15.0
Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
(1)Gate
(2)Drain
(3)Source
12.0
8.0
5.0
1.2
1.3
14.0
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Application
Switching
Packaging specifications
Package
Type
RDN050N20
Code
Basic ordering unit (pieces)
Bulk
−
500
Equivalent Circuit
Drain
∗2
Gate
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain
Current
Source Current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
DR
I
DRP
∗1
I
S
I
SP
∗1
I
AS
∗2
E
AS
∗2
P
D
T
ch
T
stg
Limits
200
±30
5
20
5
20
5
20
5
75
30
150
−55
to +150
Unit
V
V
A
A
A
A
A
A
A
mJ
W
°C
°C
∗1
∗1
ESD Protection diode
∗2
Body Diode
Source
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Avalanche Current
Avalanche Energy
Total Power Dissipation (T
C
=25°C)
Channel Temperature
Storage Temperature
∗1
Pw
≤
10µs, Duty cycle
≤
1%
∗2
L 4.5mH, V
DD
=50V,
R
G
=25Ω,
1Pulse, Tch=25°C
Thermal resistance
Parameter
Channel to case
Channel to ambient
Symbol
Rth(ch-c)
Rth(ch-a)
Limits
4.17
62.5
Unit
°C/W
°C/W
Rev.A
1/4
RDN050N20
Transistors
Electrical characteristic curves
100
T
C
=25°C
Single Pulse
10
Ta=25°C
9
Pulsed
100
8V
V
DS
=10V
Pulsed
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
8
7
6
5
4
3
2
1
10V
9V
7V
Operation in this
10
area is limited
by Ros(on)
S
1m
10
10
s
0
µ
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
Pw
0
=
1
S
m
6V
D
C
O
1
n
tio
ra
pe
0.1
5V
V
GS
=4V
0.1
1
10
100
1000
0
0
2
4
6
8
10 12 14 16 18
20
0.01
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.1 Maximun Safe
Operating Area
Fig.2 Typical Output Characteristics
Fig.3 Typical Transfer
Characteristics
GATE THRESHOLD VOLTAGE :
V
GS (th)
(V)
6.4
5.6
4.8
4
3.2
2.4
1.6
0.8
0
-50
-25
0
25
50
75
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
V
DS
=10V
I
D
=1mA
10
V
GS
=10V
Pulsed
Ta=
−25°C
Ta=25°C
Ta=75°C
Ta=125°C
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
0
5
10
15
20
25
30
I
D
=5A
2.5A
Ta=25°C
Pulsed
10
100 125 150
1
0.01
0.1
1
10
CHANNEL TEMPERATURE : T
ch
(°C)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
2.5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
5
FORWARD TRANSFER
ADMITTANCE :⏐Yfs⏐(S)
2
REVERSE DRAIN CURRENT : I
DR
(A)
V
GS
=10V
Pulsed
10
V
DS
=10V
Pulsed
100
V
GS
=0V
Pulsed
10
2
1
0.5
Ta=
−25°C
Ta=25°C
Ta=75°C
Ta=125°C
1.5
1
1
I
D
=5A
2.5A
Ta=
−25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.5
0.2
0.1
0.1
0
-50
-25
0
25
50
75
100 125 150
0.05
0.05 0.1 0.2
0.01
0.5
1
2
5
10
20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
CHANNEL TEMPERATURE : T
ch
(°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static Drain-Source
On-State Resistance vs.
Channel Temperature
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage
Rev.A
3/4
RDN050N20
Transistors
1000
200
20
V
DS
180
160
140
120
100
80
60
40
20
0
0
2
4
6
V
DD
=40V
V
DD
=100V
V
DD
=160V
V
DD
=40V
V
DD
=100V
V
DD
=160V
C
iss
100
V
GS
10
REVERSE RECOVERY TIME : t
rr
(ns)
DRAIN-SOURCE VOLTAGE : I
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
I
D
=5A
Pulsed
1000
CAPACITANCE : C (pF)
Ta=25°C
di / dt=100A /
µs
V
GS
=0V
Pulsed
100
10
f=1MHz
V
GS
=0V
Ta=25°C
Pulsed
1
0.1
1
C
oss
C
rss
10
100
1000
8
10
12
0
14
1
0.1
1
10
DRAIN SOURCE VOLTAGE : V
DS
(V)
TOTAL GATE CHARGE : Q
g
(nC)
REVERSE DRAIN CURRENT : I
DR
(A)
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
Fig.11 Dynamic Input Characteristics
Fig.12 Reverse Recovery Time
vs. Reverse Drain Current
1000
t
f
100
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r (t)
SWITCHING TIME :
t (ns)
Ta=25°C
V
DD
=100V
V
GS
=10V
R
Q
=10Ω
Pulsed
10
1
D=1
0.5
0.2
0.1
t
d (off)
t
r
10
0.1
0.05
0.02
t
d (on)
0.01
0.01
Single pulse
Tc=25°C
θ
th(ch-c)
(t)=r(t) •
=θ
th(ch-c)
θ
th(ch-c)
=4.17°C
/ W
PW
T
D= PW
T
1
0.1
1
10
10µ
100µ
1m
10m
100m
1
10
DRAIN CURRENT : I
D
(A)
PULSE WIDTH : PW (S)
Fig.13 Switching Characteristcs
Fig.14 Normalized Transient
Thermal Resistance vs.
Pulse Width
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
