RN1961FS~RN1966FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FS,RN1962FS,RN1963FS
RN1964FS,RN1965FS,RN1966FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
Unit: mm
•
•
Two devices are incorporated into a fine pitch Small Mold (6 pin)
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
0.7±0.05
package.
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1961FS
RN1962FS
R2
RN1963FS
RN1964FS
E
RN1965FS
RN1966FS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
0.48
-0.04
+0.02
•
Complementary to RN2961FS~RN2966FS
B
R1
fS6
JEDEC
JEITA
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
―
―
2-1F1C
TOSHIBA
Weight: 0.001 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1961FS~
1966FS
RN1961FS~
1964FS
Emitter-base voltage
RN1965FS,
1966FS
Symbol
V
CBO
V
CEO
Rating
20
20
10
V
EBO
5
I
C
P
C
(Note 1)
T
j
T
stg
50
50
150
−55~150
mA
mW
°C
°C
V
1
2
3
Unit
V
V
Q1
Q2
Equivalent Circuit
(top view)
6
5
4
Collector current
Collector power dissipation RN1961FS~
RN1966FS
Junction temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
RN1961FS~RN1966FS
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
RN1961FS~1966FS
RN1961FS
RN1962FS
Emitter cut-off current
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS
RN1962FS
DC current gain
RN1963FS
RN1964FS
RN1965FS
RN1966FS
Collector-emitter
saturation voltage
RN1961FS~1966FS
RN1961FS
RN1962FS
Input voltage (ON)
RN1963FS
RN1964FS
RN1965FS
RN1966FS
Input voltage (OFF)
Collector output
capacitance
RN1961FS~1964FS
RN1965FS, 1966FS
RN1961FS~1966FS
RN1961FS
RN1962FS
Input resistor
RN1963FS
RN1964FS
RN1965FS
RN1966FS
RN1961FS~1964FS
Resistor ratio
RN1965FS
RN1966FS
R1/R2
⎯
R1
⎯
V
I (OFF)
C
ob
V
CE
=
5 V, I
C
=
0.1 mA
V
CB
=
10 V, I
E
=
0,
f
=
1 MHz
V
I (ON)
V
CE
=
0.2 V, I
C
=
5 mA
V
CE (sat)
I
C
=
5 mA,
I
B
=
0.25 mA
h
FE
V
CE
=
5 V, I
C
=
10 mA
I
EBO
V
EB
=
10 V, I
C
=
0
Symbol
I
CBO
I
CEO
Test Condition
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
Min
⎯
⎯
0.89
0.41
0.18
0.088
V
EB
=
5 V, I
C
=
0
0.085
0.08
30
60
100
120
120
120
⎯
1.0
1.0
1.1
1.2
0.6
0.6
0.8
0.4
⎯
3.76
8
17.6
37.6
1.76
3.76
0.8
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
4.7
10
22
47
2.2
4.7
1.0
Max
100
500
1.33
0.63
0.29
0.133
0.127
0.121
⎯
⎯
⎯
⎯
⎯
⎯
0.15
2.0
2.2
2.7
3.6
1.1
1.2
1.5
0.8
⎯
5.64
12
26.4
56.4
2.64
5.64
1.2
kΩ
V
pF
V
V
mA
Unit
nA
0.0376 0.0468 0.0562
0.08
0.1
0.12
2
2007-11-01
RN1961FS~RN1966FS
(Q1,Q2 common)
RN1961FS
100
COLLECTOR CURRENT IC (mA)
Ta=100°C
10
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
100
RN1962FS
IC - VI(ON)
10
Ta=100°C
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
INPUT VOLTAGE VI(ON) (V)
100
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
RN1963FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
100
COLLECTOR CURRENT IC (mA)
RN1964FS
IC - VI(ON)
10
Ta=100°C
25
10
Ta=100°C
25
1
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
RN1965FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
100
COLLECTOR CURRENT IC (mA)
RN1966FS
Ta=100°C
IC - VI(ON)
Ta=100°C
10
10
25
1
25
1
-25
-25
COMMON EMITTER
VCE=0.2V
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(ON) (V)
3
2007-11-01
RN1961FS~RN1966FS
(Q1,Q2 common)
RN1961FS
10000
COLLECTOR CURRENT IC (μA)
IC - VI(OFF)
10000
COLLECTOR CURRENT IC (μA)
RN1962FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
1000
Ta=100°C
25
-25
100
100
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI(OFF) (V)
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI(OFF) (V)
RN1963FS
10000
COLLECTOR CURRENT IC (μA)
IC - VI(OFF)
10000
COLLECTOR CURRENT IC (μA)
RN1964FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
1000
Ta=100°C
25
-25
100
100
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI(OFF) (V)
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI(OFF) (V)
RN1965FS
10000
COLLECTOR CURRENT IC (μA)
IC - VI(OFF)
10000
COLLECTOR CURRENT IC (μA)
RN1966FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
1000
Ta=100°C
25
-25
100
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
4
2007-11-01
RN1961FS~RN1966FS
(Q1,Q2 common)
RN1962FS
1000
hFE - IC
RN1961FS
1000
hFE - IC
DC CURRENT GAIN hFE
100
Ta=100°C
25
-25
DC CURRENT GAIN hFE
Ta=100°C
100
-25
25
10
COMMON EMITTER
VCE = 5V
1
1
10
COLLECTOR CURRENT IC (mA)
100
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
RN1963FS
1000
hFE - IC
1000
RN1964FS
hFE - IC
Ta=100°C
DC CURRENT GAIN hFE
Ta=100°C
25
100
-25
DC CURRENT GAIN hFE
25
-25
100
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
10
1
COMMON EMITTER
VCE = 5V
10
COLLECTOR CURRENT IC (mA)
100
RN1965FS
1000
Ta=100°C
DC CURRENT GAIN hFE
hFE - IC
1000
RN1966FS
hFE - IC
25
-25
100
DC CURRENT GAIN hFE
Ta=100°C
25
-25
100
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
10
1
COMMON EMITTER
VCE = 5V
10
COLLECTOR CURRENT IC (mA)
100
5
2007-11-01
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