Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
BYR29F series
SYMBOL
QUICK REFERENCE DATA
V
R
= 500 V/ 600 V/ 700 V /
800 V
k
1
a
2
V
F
≤
1.5 V
I
F(AV)
= 8 A
t
rr
≤
75 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYR29F series is supplied in
the conventional leaded SOD100
package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD100
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
CONDITIONS
BYR29F
T
hs
≤
136 ˚C
-
-
-
-
-
-
-
-40
-
MIN.
-500
500
500
500
MAX.
-600
600
600
600
8
16
60
66
150
150
-700
700
700
700
-800
800
800
800
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
square wave;
δ
= 0.5;
T
hs
≤
73 ˚C
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
hs
≤
73 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with
reapplied V
RRM(max)
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from
both terminals to external
heatsink
Capacitance from cathode to
external heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
BYR29F series
TYP.
MAX.
1500
UNIT
V
C
isol
f = 1 MHz
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 20 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100 ˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
1.07
1.75
1.0
0.1
150
60
-
5.0
MAX.
1.50
1.95
10
0.2
200
75
6
-
UNIT
V
V
µA
mA
nC
ns
A
V
September 1998
2
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
I
dI
F
dt
F
15
PF / W
Vo = 1.26 V
Rs = 0.03 Ohms
BYR29
Ths(max) / C
a = 1.57
2.2
1.9
73
84
95
106
117
t
rr
time
10
4
5
2.8
Q
I
R
I
s
10%
100%
128
139
rrm
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
BT134W
I
F
12
10
8
IF(RMS) / A
time
VF
V
VF
time
fr
6
4
2
0
10us
100us
1ms
tp / s
10ms
100ms
Fig.2. Definition of V
fr
Fig.5. Maximum permissible rms current I
F(RMS)
versus
pulse width.
trr / ns
IF=10 A
20
PF / W
Vo = 1.26 V
Rs = 0.03 Ohms
BYR29
Ths(max) / C
D = 1.0
40
1000
15
0.5
67.5
100
95
1A
10
0.2
0.1
t
p
t
p
T
t
10
122.5
5
I
D=
Tj = 25 C
Tj = 100 C
150
12
T
0
1
0
2
4
6
IF(AV) / A
8
10
1
10
dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum t
rr
at T
j
= 25˚C and 100˚C.
September 1998
3
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
10
Irrm / A
IF=10A
1000
Qs / nC
IF = 10A
1
IF=1A
100
2A
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
10
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Fig.9. Maximum Q
s
at T
j
= 25˚C
30
25
20
15
IF / A
Tj = 25 C
Tj = 150 C
BYR29
10
Transient thermal impedance, Zth j-hs (K/W)
1
0.1
typ
max
10
0.01
5
0
P
D
t
p
D=
t
p
T
t
0
0.5
1
1.5
VF / V
2
2.5
3
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29F
10s
Fig.8. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Transient thermal impedance Z
th
= f(t
p
)
September 1998
4
Rev 1.400
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYR29F series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
k
0.4
M
a
0.9
0.7
0.55 max
1.3
5.08
top view
Fig.11. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.400
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