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© Nexperia B.V. (year). All rights reserved.
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PMEG2020EPA
2 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small
Surface-Mounted Device (SMD) plastic package.
1.2 Features
Average forward current: I
F(AV)
≤
2 A
Reverse voltage: V
R
≤
20 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
80
°C
T
sp
≤
140
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
385
335
2
2
20
420
1900
A
A
V
mV
μA
reverse voltage
forward voltage
reverse current
I
F
= 2 A
V
R
= 20 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG2020EPA
2 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode
anode
cathode
3
3
1, 2
006aab624
Simplified outline
Graphic symbol
1
2
Transparent top view
3. Ordering information
Table 3.
Ordering information
Package
Name
Description
Version
Type number
PMEG2020EPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2
×
2
×
0.65 mm
4. Marking
Table 4.
Marking codes
Marking code
AK
Type number
PMEG2020EPA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
80
°C
T
sp
≤
140
°C
I
FRM
I
FSM
P
tot
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[2]
[1]
Min
-
Max
20
Unit
V
-
-
-
-
-
-
-
2
2
7
17
500
960
1800
A
A
A
A
mW
mW
mW
[2][3]
[4][5]
[4][6]
[1][4]
PMEG2020EPA_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
2 of 14
NXP Semiconductors
PMEG2020EPA
2 A low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
[6]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Both anode pins connected.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
250
130
70
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG2020EPA_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
3 of 14
NXP Semiconductors
PMEG2020EPA
2 A low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.25
0.1
0.05
10
0.02
0
0.01
0.2
006aab919
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab920
duty cycle =
10
2
1
0.75
0.5
0.25
0.1
10
0
0.02
0.01
0.33
0.2
0.05
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2020EPA_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
4 of 14
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