Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
BYQ30EX series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.95 V
I
O(AV)
= 16 A
I
RRM
≤
0.2 A
t
rr
≤
25 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYQ30EX series is supplied in
the conventional leaded SOT186A
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
isolated
SOT186A
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
square wave
δ
= 0.5; T
hs
≤
59 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
59 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
CONDITIONS
BYQ30EX
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
16
16
100
110
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
1
Neglecting switching and reverse current losses.
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
BYQ30EX series
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.0
7.0
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 16 A; T
j
= 150˚C
I
F
= 16 A;
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 50 A/µs; T
j
= 100 ˚C
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.83
1.0
0.98
0.3
2
4
20
1.0
1
MAX.
0.95
1.15
1.25
0.6
30
11
25
2
-
UNIT
V
V
mA
µA
nC
ns
A
V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
I
dI
F
dt
F
12
10
Forward dissipation, PF (W) BYQ30
Vo = 0.75 V
Rs 0.025 Ohms
Ths(max) / C
90
100
t
a = 1.57
rr
time
8
2.8
6
4
4
1.9
2.2
110
120
130
140
150
8
Q
I
R
I
s
10%
100%
2
0
rrm
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
)per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
1000
I
F
100
IF=10A
time
IF=1A
VF
V
VF
time
fr
10
1
1
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25 ˚C.
12
10
8
6
4
2
Forward dissipation, PF (W) BYQ30
Vo = 0.75 V
Rs = 0.025 Ohms
0.5
0.2
0.1
I
t
p
Ths(max) / C
D = 1.0
trr / ns
80
90
110
120
1000
100
IF=10A
IF=1A
D=
t
p
T
t
130
140
150
12
10
T
0
0
2
4
6
8
Average forward current, IF(AV) (A)
10
1
1
10
dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum t
rr
at T
j
= 100 ˚C.
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
10
Irrm / A
100 Qs / nC
IF=10A
1
IF=1A
IF=10A
5A
2A
1A
10
0.1
0.01
1
10
-dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
10
Irrm / A
10
Transient thermal impedance, Zth j-hs (K/W)
IF=10A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYQ30EX
Fig.8. Maximum I
rrm
at T
j
= 100 ˚C.
Fig.11. Transient thermal impedance; Z
th j-hs
= f(t
p
).
20
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
BYQ30
15
10
typ
5
max
0
0
0.5
1
1.5
Forward voltage, VF (V)
2
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
BYQ30EX series
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
stm32/stm8
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