mosfet dual N-channel
参数名称 | 属性值 |
Manufacture | Advanced Linear Devices |
产品种类 Product Category | MOSFET |
RoHS | Yes |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 10 V |
Vgs - Gate-Source Breakdown Voltage | 10.6 V |
Id - Continuous Drain Curre | 6.9 mA |
Rds On - Drain-Source Resistance | 500 Ohms |
Configurati | Dual |
最大工作温度 Maximum Operating Temperature | + 70 C |
Pd - Power Dissipati | 500 mW |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | PDIP-8 |
Channel Mode | Depleti |
Forward Transconductance - Mi | 0.0014 S |
最小工作温度 Minimum Operating Temperature | 0 C |
工厂包装数量 Factory Pack Quantity | 50 |
Typical Turn-Off Delay Time | 10 ns |
ALD111933PAL | ALD111933SAL | ALD111933MAL | |
---|---|---|---|
描述 | mosfet dual N-channel | mosfet dual N-channel | mosfet dual N-channel |
Manufacture | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
产品种类 Product Category |
MOSFET | MOSFET | MOSFET |
RoHS | Yes | Yes | Yes |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 10 V | 10 V | 10 V |
Vgs - Gate-Source Breakdown Voltage | 10.6 V | 10.6 V | 10.6 V |
Id - Continuous Drain Curre | 6.9 mA | 6.9 mA | 6.9 mA |
Rds On - Drain-Source Resistance | 500 Ohms | 500 Ohms | 500 Ohms |
Configurati | Dual | Dual | Dual |
最大工作温度 Maximum Operating Temperature |
+ 70 C | + 70 C | + 70 C |
Pd - Power Dissipati | 500 mW | 500 mW | 500 mW |
安装风格 Mounting Style |
Through Hole | SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
PDIP-8 | SOIC-8 | MSOP-8 |
Channel Mode | Depleti | Depleti | Depleti |
Forward Transconductance - Mi | 0.0014 S | 0.0014 S | 0.0014 S |
最小工作温度 Minimum Operating Temperature |
0 C | 0 C | 0 C |
工厂包装数量 Factory Pack Quantity |
50 | 50 | 50 |
Typical Turn-Off Delay Time | 10 ns | 10 ns | 10 ns |
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