ISL9K460P3
—
STEALTH™ Dual Diode
November 2013
ISL9K460P3
8 A, 600 V,
STEALTH
TM
II Diode
Features
• Stealth Recovery
t
rr
= 17 ns (@ I
F
= 4 A)
• Max Forward Voltage, V
F
= 2.4 V (@ T
C
= 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Description
The ISL9K460P3 is a STEALTH™ dual diode optimized
for low loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse
recovery current (I
rr
) and exceptionally soft recovery
under typical operating conditions. This device is
intended for use as a free wheeling or boost diode in
power supplies and other power switching applications.
The low I
rr
and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode
may be operated without the use of additional snubber
circuitry. Consider using the STEALTH™ diode with an
SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Applications
•
SMPS
FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode
Package
JEDEC TO-220AB
Symbol
K
CATHODE
(FLANGE)
ANODE 2
CATHODE
ANODE 1
A
1
A
2
Device Maximum Ratings
(per leg)
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 155°C)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Rating
600
Unit
V
600
600
4
8
8
50
58
10
-55 to 175
300
260
V
V
A
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
1
www.fairchildsemi.com
ISL9K460P3
—
STEALTH™ Dual Diode
Package Marking and Ordering Information
Part Number
ISL9K460P3
Top Mark
ISL9K460P3
Package
TO-220
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
50
Electrical Characteristics
(per leg)
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
I
R
Instantaneous Reverse Current
V
R
= 600 V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
µA
mA
On State Characteristics
V
F
Instantaneous Forward Voltage
I
F
= 4 A
T
C
= 25°C
T
C
= 125°C
-
-
2.0
1.6
2.4
2.0
V
V
Dynamic Characteristics
C
J
Junction Capacitance
V
R
= 10 V, I
F
= 0 A
-
19
-
pF
Switching Characteristics
t
rr
t
rr
I
rr
Q
rr
t
rr
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Current
I
F
= 1 A, di
F
/dt = 100 A/µs, V
R
= 30 V
I
F
= 4 A, di
F
/dt = 100 A/µs, V
R
= 30 V
I
F
= 4 A,
di
F
/dt = 200 A/µs, V
R
= 390 V,
T
C
= 25°C
I
F
= 4 A,
di
F
/dt = 200 A/µs,
V
R
= 390 V,
T
C
= 125°C
I
F
= 4 A,
di
F
/dt = 400 A/µs,
V
R
= 390 V,
T
C
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
17
19
17
2.6
22
77
4.2
2.8
100
54
3.5
4.3
110
500
20
22
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
A
nC
ns
A
nC
A/µs
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Reverse Recovery Current
S
I
rr
Q
rr
t
rr
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Reverse Recovery Current
S
I
rr
Q
rr
dI
M
/dt
Reverse Recovery Charge
Maximum di/dt during t
b
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220
-
-
-
-
2.6
62
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
2
www.fairchildsemi.com
ISL9K460P3
—
STEALTH™ Dual Diode
Typical Performance Curves
8
7
I
F
, FORWARD CURRENT (A)
6
5
4
100
o
C
3
2
1
0
0
0.5
1
1.5
2
2.5
3
V
F
, FORWARD VOLTAGE (V)
0.1
100
150
o
C
600
175
o
C
175
o
C
25
o
C
100
150
o
C
125
o
C
10
100
o
C
I
R
, REVERSE CURRENT (µA)
75
o
C
1
25
o
C
200
300
400
500
600
V
R
, REVERSE VOLTAGE (V)
Figure 1.
Forward Current vs Forward Voltage
90
80
70
t, RECOVERY TIMES (ns)
60
50
40
30
20
10
0
1
t
a
AT di
F
/dt = 200A/µs, 500A/µs, 800A/µs
V
R
= 390 V, T
J
= 125
o
C
t
b
AT di
F
/dt = 200 A/µs, 500 A/µs, 800 A/µs
Figure 2.
Reverse Current vs Reverse Voltage
120
V
R
= 390 V, T
J
= 125
o
C
100
t, RECOVERY TIMES (ns)
t
b
AT I
F
= 8 A, 4 A, 2 A
80
60
40
t
a
AT I
F
= 8 A, 4 A, 2 A
20
2
3
4
5
6
7
8
0
100
200
300
400
500
600
700
800
900
1000
I
F
, FORWARD CURRENT (A)
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3.
t
a
and t
b
Curves vs Forward Current
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
V
R
= 390 V, T
J
= 125
o
C
Figure 4.
t
a
and t
b
Curves vs di
F
/dt
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
8
V
R
= 390 V, T
J
= 125
o
C
8
7
7
6
I
F
= 4 A
di
F
/dt = 800 A/µs
I
F
= 8 A
6
5
4
3
2
1
100
200
300
400
500
600
I
F
= 2 A
5
di
F
/dt = 500 A/µs
4
3
di
F
/dt = 200 A/µs
2
1
2
3
4
5
6
7
8
I
F
, FORWARD CURRENT (A)
700
800
900
1000
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5.
Maximum Reverse Recovery Current
vs Forward Current
Figure 6.
Maximum Reverse Recovery Current
vs di
F
/dt
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
3
www.fairchildsemi.com
ISL9K460P3
—
STEALTH™ Dual Diode
Typical Performance Curves
(Continued)
6
S, REVERSE RECOVERY SOFTNESS FACTOR
Q
RR
, REVERSE RECOVERY CHARGE (nC)
V
R
= 390 V, T
J
= 125
o
C
180
V
R
= 390 V,T
J
= 125
o
C
I
F
= 8 A
5
160
4
I
F
= 4 A
I
F
= 8 A
140
I
F
= 4 A
120
3
I
F
= 2 A
2
100
I
F
= 2 A
80
1
100
200
300
400
500
600
700
800
900
1000
60
100
200
300
400
500
600
700
800
900
1000
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7.
Reverse Recovery Softness Factor
vs di
F
/dt
1800
1600
C
J
, JUNCTION CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0.03
Figure
8. Reverse Recovery Charge vs di
F
/dt
5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
4
3
2
1
0
0.1
1.0
10
100
150
155
160
165
(
O
C)
170
175
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE
Figure 9.
Junction Capacitance vs Reverse Voltage
Figure 10.
DC Current Derating Curve
1.0
Z
q
JA
, NORMALIZED
THERMAL IMPEDANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
0.01
10
-5
10
-4
Figure 11.
Normalized Maximum Transient Thermal Impedance
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
4
www.fairchildsemi.com
ISL9K460P3
—
STEALTH™ Dual Diode
Test Circuit and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
I
F
DUT
R
G
CURRENT
SENSE
+
MOSFET
V
DD
0
0.25 I
RM
I
RM
di
F
dt
t
a
t
rr
t
b
V
GE
t
1
t
2
-
Figure 12. t
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
I = 0.5A
L = 80mH
R < 0.1Ω
V
DD
= 200V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and
Voltage Waveforms
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
5
www.fairchildsemi.com
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