RSY160P05
Transistors
4V Drive Pch MOSFET
RSY160P05
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TCPT
(2)
Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
(1)
(3)
Application
Switching
Packaging specifications
Package
Type
RSY160P05
Code
Basic ordering unit (pieces)
Taping
TL
2500
Equivalent circuit
∗1
∗2
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
−45
±20
±16
±32
−16
−32
20
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Tc=25°C
Thermal resistance
Parameter
Channel to ambient
∗
Tc=25°C
Symbol
Rth (ch-c)
∗
Limits
6.25
Unit
°C
/ W
1/5
RSY160P05
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
−45
−
−1.0
−
−
−
8.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
35
45
50
−
2150
250
150
13
30
90
105
17.0
5.2
5.5
Max.
±10
−
−1
−2.5
50
63
70
−
−
−
−
−
−
−
−
25.5
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
= ±20V,
V
DS
=0V
I
D
= −1mA,
V
GS
=0V
V
DS
= −45V,
V
GS
=0V
V
DS
= −10V,
I
D
= −1mA
I
D
= −16A,
V
GS
= −10V
I
D
= −8A,
V
GS
= −4.5V
I
D
= −8A,
V
GS
= −4.0V
V
DS
= −10V,
I
D
= −8A
V
DS
= −10V
V
GS
=0V
f=1MHz
I
D
= −10A
V
DD
−25
V
V
GS
= −10V
R
L
=2.5Ω
R
G
=10Ω
V
DD
−25V
I
D
= −10A
V
GS
= −5V
R
L
=2.5Ω
R
G
=10Ω
Body diode characteristics
(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
= −16A,
V
GS
=0V
2/5
RSY160P05
Transistors
Electrical characteristic curves
16
14
DRAIN CURRENT : -I
D
[A]
12
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
-3.0V
V
GS
= -2.5V
16
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
-10V
-6.0V
-4.5V
-4.0V
14
12
10
8
6
4
2
0
0
2
4
6
8
10
-2.8V
V
GS
= -2.5V
-3.0V
-10V
-4.0V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
100
V
DS
= -10V
Pulsed
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0.1
0.01
1.0
2.0
3.0
4.0
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical Output Characteristics(Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
1000
Ta=25°C
Pulsed
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
100
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
V
GS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
10
0.1
1
10
100
10
0.1
1
10
100
10
0.1
1
10
100
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
1000
V
GS
= -4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
FORWARD TRANSFER ADMITTANCE
: |Yfs| [S]
REVERSE DRAIN CURRENT : -Is [A]
V
DS
= -10V
Pulsed
10
100
V
GS
=0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0.1
10
0.1
1
10
100
0
0.1
1
10
100
0.01
0
0.2
0.4
0.6
0.8
1
1.2
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
DRAIN-CURRENT : -I
D
[A]
Fig.8 Forward Transfer Admittance vs.
Drain Current
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
RSY160P05
Transistors
200
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
SWITCHING TIME : t [ns]
160
120
80
40
0
0
5
10
15
I
D
= -16A
Ta=25°C
Pulsed
10000
Ta=25°C
V
DD
= -25V
V
GS
= -10V
R
G
=10Ω
Pulsed
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
8
6
4
2
0
0
5
10
15
20
25
30
Ta=25°C
V
DD
= -25V
I
D
= -10A
R
G
=10Ω
Pulsed
1000
t
f
t
d
(off)
100
10
t
r
1
0.01
0.1
1
10
100
t
d
(on)
I
D
= -8A
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source
DRAIN-CURRENT : -I
D
[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
Ciss
CAPACITANCE : C [pF]
1000
100
Crss
Coss
Ta=25°C
f=1MHz
V
GS
=0V
0.01
0.1
1
10
100
10
GATE-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
4/5
RSY160P05
Transistors
Measurement circuits
Pulse Width
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
10%
50%
10%
50%
90%
10%
90%
t
d(off)
t
off
tf
R
G
V
DD
V
DS
90%
t
d(on)
t
on
tr
Fig.14 Switching Time Test Circuit
Fig.15 Switching Time Waveforms
V
G
V
GS
I
D
R
L
V
DS
V
GS
Q
gs
Q
g
I
G (Const.)
R
G
D.U.T.
Q
gd
V
DD
Charge
Fig.16 Gate Charge Test Circuit
Fig.17 Gate Charge Waveform
5/5
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