RZL025P01
Transistors
1.5V Drive Pch MOSFET
RZL025P01
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TUMT6
Features
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
Abbreviated symbol : YC
Application
Switching
Packaging specifications
Package
Type
RZL025P01
Code
Basic ordering unit (pieces)
Taping
TR
3000
Equivalent circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
−12
±10
±2.5
±10
−0.8
−10
1.0
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
∗
When mounted on a ceramic board.
Symbol
Rth (ch-a)
∗
Limits
125
Unit
°C
/ W
0.2Max.
1/5
RZL025P01
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
Typ.
−
−
−
−
44
60
81
110
−
1350
130
125
9
35
130
85
13
2.5
2.0
Max.
±10
−
−1
−1.0
61
84
121
220
−
−
−
−
−
−
−
−
−
−
−
I
GSS
Gate-source leakage
−
Drain-source breakdown voltage V
(BR) DSS
−12
Zero gate voltage drain current
−
I
DSS
Gate threshold voltage
V
GS (th)
−0.3
−
Static drain-source on-state
−
R
DS (on)
∗
resistance
−
−
∗
3.5
Forward transfer admittance
Y
fs
C
iss
Input capacitance
−
−
C
oss
Output capacitance
−
C
rss
Reverse transfer capacitance
∗
t
d (on)
−
Turn-on delay time
∗
t
r
−
Rise time
∗
t
d (off)
−
Turn-off delay time
∗
t
f
−
Fall time
∗
−
Q
g
Total gate charge
∗
−
Q
gs
Gate-source charge
∗
−
Q
gd
Gate-drain charge
∗Pulsed
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±10V, V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−12V,
V
GS
=0V
V
DS
=
−6V,
I
D
=
−1mA
I
D
=
−2.5A,
V
GS
=
−4.5V
I
D
=
−1.2A,
V
GS
=
−2.5V
I
D
=
−1.2A,
V
GS
=
−1.8V
I
D
=
−0.5A,
V
GS
=
−1.5V
V
DS
=
−6V,
I
D
=
−2.5A
V
DS
=
−6V
V
GS
=0V
f=1MHz
I
D
=
−1.2A
V
DD
−6
V
V
GS
=
−4.5V
R
L
5Ω
R
G
=10Ω
V
DD
−6V,
I
D
=
−2.5A
V
GS
=
−4.5V
R
L
2.4Ω, R
G
=10Ω
Body diode characteristics(Source-drain)
(Ta=25°C)
Parameter
Forward voltage
∗
Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
=
−2.5A,
V
GS
=0V
2/5
RZL025P01
Transistors
Electrical characteristic curves
10
Ta=25℃
Pulsed
10
DRAIN CURRENT -I
D
[A]
8
6
4
2
0
V
GS
= -1.2V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -2.5V
10
DRAIN CURRENT : -I
D
[A]
Ta=25℃
Pulsed
V
GS
= -1.8V
DRAIN CURRENT -I
D
[A]
8
6
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -1.6V
V
DS
= -6V
Pulsed
1
4
Ta= 125°C
Ta= 75℃
Ta= 25℃
Ta= - 25℃
V
GS
= -1.5V
0.1
2
V
GS
= -1.2V
0
0.0
0.2
0.4
0.6
0.8
1.0
0.01
10
0
2
4
6
8
0.0
0.5
1.0
1.5
DRAIN-SOURCE VOLTAGE -V
DS
[V]
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE -V
DS
[V]
Fig.2 Typical Output Characteristics(Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on) [mΩ]
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on) [mΩ]
Ta=25℃
Pulsed
V
GS
= -4.5V
Pulsed
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on) [mΩ]
V
GS
= -2.5V
Pulsed
100
.
100
100
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
0.1
1
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
10
0.1
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
0.1
1
DRAIN CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
10
10
10
DRAIN CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on) [mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on) [mΩ]
V
GS
= -1.8V
Pulsed
V
GS
= -1.5V
Pulsed
REVERSE DRAIN CURRENT : -Is [A]
1000
1000
10
V
GS
=0V
Pulsed
1
100
100
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
10
0.1
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
0.1
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
10
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DRAIN CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
DRAIN CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
RZL025P01
Transistors
GATE-SOURCE VOLTAGE : -V
GS
[V]
200
Ta=25℃
Pulsed
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on) [mΩ]
5
4
3
2
1
0
Ta=25℃
V
DD
= -6V
I
D
= -2.5A
R
G
=10Ω
Pulsed
V
DS
= -6V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
150
I
D
= -2.5A
10
100
I
D
= -1.2A
1
50
Ta= -25℃
Ta=25℃
Ta=75℃
Ta=125℃
0
0
5
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10
0
0.1
DRAIN CURRENT : -I
D
[A]
Fig.11 Forward Transfer Admittance
vs. Drain Current
1.0
10.0
0
2
4
6
8
10
12
14
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
SWITCHING TIME : t [ns]
CAPACITANCE : C [pF]
1000
td(off)
tf
1000
Ciss
Crss
100
100
Coss
Ta=25℃
f=1MHz
V
GS
=0V
10
td(on)
tr
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1
0.01
0.1
1
DRAIN CURRENT : -I
D
[A]
Ta=25℃
V
DD
= -6V
V
GS
=-4.5V
R
G
=10Ω
Pulsed
10
Fig.14 Switching Characteristics
4/5
RZL025P01
Transistors
Measurement circuits
Pulse width
V
GS
I
D
V
DS
R
L
D.U.T.
R
G
V
DD
V
GS
10%
50%
10%
50%
90%
10%
90%
t
d(off)
t
off
t
f
V
DS
90%
t
d(on)
t
on
t
r
Fig.15 Switching Time Test Circuit
Fig.16 Switching Time Waveforms
V
G
V
GS
I
D
R
L
V
DS
V
GS
Q
gs
Q
g
I
G (Const.)
D.U.T.
R
G
V
DD
Q
gd
Charge
Fig.17 Gate Charge Test Circuit
Fig.18 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
5/5
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