MRF323: 产品描述transistors RF bipolar RF transistor; 产品类别半导体分立半导体; 文件大小13KB，共1页; 制造商All Sensors; 标准

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MRF323概述

transistors RF bipolar RF transistor

MRF323规格参数

参数名称	属性值
Manufacture	Advanced Semiconductor, Inc.
产品种类 Product Category	Transistors RF Bipol
RoHS	Yes
类型 Type	RF Bipolar Powe
Transistor Polarity	NPN
DC Collector/Base Gain hfe Mi	20
Maximum Operating Frequency	500 MHz
Collector- Emitter Voltage VCEO Max	33 V
Emitter- Base Voltage VEBO	4 V
Continuous Collector Curre	2.2 A
最大工作温度 Maximum Operating Temperature	+ 200 C
Power Dissipati	55 W
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	Case244-04
系列 Packaging	Tray
Maximum DC Collector Curre	3 A
最小工作温度 Minimum Operating Temperature	- 65 C

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MRF323

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

MRF323

is Designed for

Wide Band Large-Signal Driver and

Predriver Applications in the

200 to 500 MHz Range.

PACKAGE STYLE .280" 4L STUD

45°

FEATURES INCLUDE:

•

Gold Metalization

•

30:1 VSWR

MAXIMUM RATINGS

DISS

STG

DIM

MINIMUM

inches / mm

#8-32 UNC

MAXIMUM

inches / mm

2.2 A

(CONT)

3.0 A

(PEAK)

60 V

55 W @ T

= 25 C

-65 C to +150 C

3.2 C/W

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

.572 / 14.53

.130 / 3.30

.245 / 6.22

.640 / 16.26

.175 / 4.45

.275 / 6.99

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

.255 / 6.48

.217 / 5.51

.285 / 7.24

CHARACTERISTICS

SYMBOL

CBO

CES

CEO

EBO

CBO

= 20 mA

= 2.0 mA

= 30 V

= 1.0 A

= 28 V

= 25 C

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

4.0

2.0

UNITS

---

= 5.0 V

f = 1.0 MHz

out

= 20 W

f = 400 MHz

out

= 20 W

= 28 V

VSWR = 30:1

ALL PHASE ANGLES

NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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