DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
1996 May 24
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package,
using a high temperature alloyed
BYM26 series
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26F
BYM26G
V
R
continuous reverse voltage
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26F
BYM26G
I
F(AV)
average forward current
BYM26A to E
BYM26F and G
I
F(AV)
average forward current
BYM26A to E
BYM26F and G
,
a
MAM104
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
2.30
2.40
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
UNIT
T
tp
= 55
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 65
°C;
PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
−
−
1.05
1.00
A
A
1996 May 24
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYM26A to E
BYM26F and G
I
FRM
repetitive peak forward current
BYM26A to E
BYM26F and G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Figs 12 and 13
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
T
amb
= 65
°C;
see Figs 8 and 9
−
−
−
−
CONDITIONS
T
tp
= 55
°C;
see Figs 6 and 7
−
−
BYM26 series
MIN.
MAX.
19
21
8.0
8.5
45
10
+175
+175
A
A
A
A
A
UNIT
mJ
°C
°C
−65
−65
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYM26A to E
BYM26F and G
V
F
forward voltage
BYM26A to E
BYM26F and G
V
(BR)R
reverse avalanche breakdown
voltage
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26F
BYM26G
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.16
t
rr
reverse recovery time
BYM26A to C
BYM26D and E
BYM26F and G
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
10
150
V
V
V
V
V
V
V
µA
µA
I
F
= 2 A;
see Figs 14 and 15
CONDITIONS
I
F
= 2 A; T
j
= T
j max
;
see Figs 14 and 15
MIN.
−
−
−
−
TYP.
−
−
−
−
MAX.
1.34
1.34
2.65
2.30
V
V
V
V
UNIT
−
−
−
−
−
−
30
75
150
ns
ns
ns
1996 May 24
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
C
d
PARAMETER
diode capacitance
BYM26A to C
BYM26D and E
BYM26F and G
dI
R
--------
dt
maximum slope of reverse recovery when switched from
I
F
= 1 A to V
R
≥
30 V and
current
dI
F
/dt =
−1
A/µs;
BYM26A to C
see Fig.21
BYM26D and E
BYM26F and G
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
CONDITIONS
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
MIN.
−
−
−
BYM26 series
TYP.
85
75
65
MAX.
−
−
−
UNIT
pF
pF
pF
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
VALUE
25
75
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
1996 May 24
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MSA875
BYM26 series
handbook, halfpage
2.4
handbook, halfpage
3
MBD421
I F(AV)
(A)
1.8
20 15
10 lead length (mm)
I F(AV)
(A)
2
lead length 10 mm
1.2
1
0.6
0
0
100
T tp (
o
C)
200
0
0
100
Ttp (
o
C)
200
BYM26A to E
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
BYM26F and G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
2.0
MLB490
I F(AV)
(A)
1.6
handbook, halfpage
2.0
MBD416
I F(AV)
(A)
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
0
100
T amb ( C)
o
0
200
0
100
T amb ( C)
o
200
BYM26A to E
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
BYM26F and G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 24
5
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