Freescale Semiconductor

Technical Data

Document Number: MRF6V2150N

Rev. 4, 4/2010

RF Power Field-

-Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed primarily for CW large--signal output and driver applications with

frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance at 220 MHz: V

DD

= 50 Volts, I

DQ

= 450 mA,

P

out

= 150 Watts

Power Gain — 25 dB

Drain Efficiency — 68.3%

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Qualified Up to a Maximum of 50 V

DD

Operation

•

Integrated ESD Protection

•

225°C Capable Plastic Package

•

RoHS Compliant

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6V2150NR1

MRF6V2150NBR1

10-

-450 MHz, 150 W, 50 V

LATERAL N-

-CHANNEL

SINGLE-

-ENDED

BROADBAND

RF POWER MOSFETs

CASE 1486-

-03, STYLE 1

TO-

-270 WB-

-4

PLASTIC

MRF6V2150NR1

CASE 1484-

-04, STYLE 1

TO-

-272 WB-

-4

PLASTIC

MRF6V2150NBR1

PARTS ARE SINGLE-

-ENDED

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

V

DSS

V

GS

T

stg

T

C

T

J

Value

-- 0.5, +110

-- 0.5, + 12

-- 65 to +150

150

225

Unit

Vdc

°C

(Top View)

Symbol

R

θJC

Value

(2,3)

0.24

Unit

°C/W

Note: Exposed backside of the package is

the source terminal for the transistor.

RF

in

/V

GS

RF

out

/V

DS

RF

in

/V

GS

RF

out

/V

DS

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 150 W CW

Figure 1. Pin Connections

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

2 (Minimum)

A (Minimum)

IV (Minimum)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

©

MRF6V2150NR1 MRF6V2150NBR1

1

RF Device Data

Freescale Semiconductor

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

3

Package Peak Temperature

260

Unit

°C

Table 5. Electrical Characteristics

(T

A

= 25°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

DS

= 100 Vdc, V

GS

= 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V

DS

= 50 Vdc, V

GS

= 0 Vdc)

Drain--Source Breakdown Voltage

(I

D

= 75 mA, V

GS

= 0 Vdc)

Gate--Source Leakage Current

(V

GS

= 5 Vdc, V

DS

= 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V

DS

= 10 Vdc, I

D

= 400

μAdc)

Gate Quiescent Voltage

(V

DD

= 50 Vdc, I

D

= 450 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(V

GS

= 10 Vdc, I

D

= 1 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(V

DS

= 50 Vdc

±

30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

Output Capacitance

(V

DS

= 50 Vdc

±

30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

Input Capacitance

(V

DS

= 50 Vdc, V

GS

= 0 Vdc

±

30 mV(rms)ac @ 1 MHz)

Power Gain

Drain Efficiency

Input Return Loss

Power Gain

Drain Efficiency

Input Return Loss

f = 27 MHz

f = 450 MHz

f = 27 MHz

f = 450 MHz

f = 27 MHz

f = 450 MHz

C

rss

C

oss

C

iss

—

1.6

93

163

—

pF

V

GS(th)

V

GS(Q)

V

DS(on)

1

1.5

—

1.62

2.6

0.26

3

3.5

—

Vdc

I

DSS

I

DSS

V

(BR)DSS

I

GSS

—

110

—

2.5

50

—

10

mA

μAdc

Vdc

μAdc

Symbol

Min

Typ

Max

Unit

Functional Tests

(In Freescale Test Fixture, 50 ohm system) V

DD

= 50 Vdc, I

DQ

= 450 mA, P

out

= 150 W, f = 220 MHz, CW

G

ps

η

D

IRL

G

ps

η

D

IRL

23.5

66

—

25

68.3

--17

32.3

22.9

78.7

57.6

--10.6

--17.6

26.5

—

--9

—

dB

%

dB

%

dB

Typical Performances

(In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) V

DD

= 50 Vdc, I

DQ

= 450 mA, P

out

= 150 W CW

ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting)

PRIOR TO STARTING SYSTEM DESIGN

to

ensure proper mounting of these devices.

MRF6V2150NR1 MRF6V2150NBR1

2

RF Device Data

Freescale Semiconductor

B3

B1

V

BIAS

+

C1

+

C2

+

C3

C4

C5

C6

C7

R1

B2

L2

+

C17

C18

C19

C20

V

SUPPLY

L1

C8

RF

INPUT

C9

C10 C11 R2

Z3

Z4

Z5

L3

Z6

Z7

Z8

Z9

C14

C15

C16

RF

OUTPUT

Z10

C23

C21

C22

Z11

Z1

C12

Z2

C13

DUT

Z1

Z2

Z3

Z4

Z5

Z6, Z7

0.352″ x 0.082″ Microstrip

0.944″ x 0.082″ Microstrip

1.480″ x 0.082″ Microstrip

0.276″ x 0.220″ Microstrip

0.434″ x 0.220″ Microstrip

0.298″ x 0.630″ Microstrip

Z8

Z9

Z10

Z11

PCB

0.443″ x 0.170″ Microstrip

2.360″ x 0.170″ Microstrip

0.502″ x 0.170″ Microstrip

0.443″ x 0.082″ Microstrip

Arlon CuClad 250GX--0300--55--22, 0.030″,

ε

r

= 2.55

Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic — 220 MHz

Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values — 220 MHz

Part

B1, B2

B3

C1

C2

C3

C4, C17

C5, C18

C6, C11, C19

C7, C8, C15, C16

C9, C12, C14, C23

C10

C13

C20

C21

C22

L1

L2

L3

R1

R2

Description

95

Ω,

100 MHz Long Ferrite Beads, Surface Mount

47

Ω,

100 MHz Short Ferrite Bead, Surface Mount

47

μF,

50 V Electrolytic Capacitor

22

μF,

35 V Tantalum Chip Capacitor

10

μF,

35 V Tantalum Chip Capacitor

39 K pF Chip Capacitors

22 K pF Chip Capacitors

0.1

μF,

50 V Chip Capacitors

2.2

μF,

50 V Chip Capacitors

1000 pF Chip Capacitors

220 nF Chip Capacitor

75 pF Chip Capacitor

470

μF,

63 V Electrolytic Capacitor

30 pF Chip Capacitor

33 pF Chip Capacitor

4 Turn #18 AWG, 0.18″ ID

82 nH Inductor

17.5 nH Inductor

270

Ω,

1/4 W Chip Resistor

27

Ω,

1/4 W Chip Resistor

Part Number

2743021447

2743019447

476KXM063M

T494X226K035AT

T491D106K035AT

ATC200B393KT50XT

ATC200B203KT50XT

CDR33BX104AKYS

C1825C225J5RAC

ATC100B102JT50XT

C1812C224K5RAC

ATC100B750JT500XT

ESME630ELL471MK25S

ATC100B300JT500XT

ATC100B330JT500XT

None

1812SMS--82NJL

B06TJL

CRCW12062700FKEA

CRCW12064R75FKEA

Manufacturer

Fair--Rite

Illinois Capacitor

Kemet

ATC

Kemet

ATC

Kemet

ATC

United Chemi--Con

ATC

None

Coilcraft

Vishay

MRF6V2150NR1 MRF6V2150NBR1

RF Device Data

Freescale Semiconductor

3

C1

C2

C3

+

B1

C4

C5

C6

B2

R1

C8

C15*

C16*

L2

C19

C18

C17

B3

+

C20

C7

C10

C11

C9

R2

C12

L3

C14

L1

CUT OUT AREA

C21

C22

C23

C13

MRF6V2150N/NB

Rev. 3

* Stacked

Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout — 220 MHz

MRF6V2150NR1 MRF6V2150NBR1

4

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

1000

100

C

oss

Measured with

±30

mV(rms)ac @ 1 MHz

V

GS

= 0 Vdc

C

rss

I

D

, DRAIN CURRENT (AMPS)

C

iss

C, CAPACITANCE (pF)

10

1

0

10

20

30

40

50

V

DS

, DRAIN--SOURCE VOLTAGE (VOLTS)

1

T

C

= 25°C

10

V

DS

, DRAIN--SOURCE VOLTAGE (VOLTS)

100

200

Figure 4. Capacitance versus Drain-

-Source Voltage

5

4

G

ps

, POWER GAIN (dB)

V

GS

= 3 V

3

2.75 V

2

2.5 V

1

2.25 V

0

20

40

60

80

100

120

21

1

2.63 V

27

26

25

24

337 mA

23

22

225 mA

Figure 5. DC Safe Operating Area

I

DQ

= 675 mA

563 mA

450 mA

I

D

, DRAIN CURRENT (AMPS)

V

DD

= 50 Vdc

f = 220 MHz

10

P

out

, OUTPUT POWER (WATTS) CW

100

200

DRAIN VOLTAGE (VOLTS)

Figure 6. DC Drain Current versus Drain Voltage

--10

IMD, THIRD ORDER INTERMODULATION

DISTORTION (dBc)

--15

--20

--25

--30

--35

--40

--45

--50

--55

--60

5

10

100

P

out

, OUTPUT POWER (WATTS) PEP

300

58

56

54

52

50

48

22

Figure 7. CW Power Gain versus Output Power

V

DD

= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz

Two--Tone Measurements, 100 kHz Tone Spacing

I

DQ

= 225 mA

336 mA

450 mA

563 mA

685 mA

900 mA

P

out

, OUTPUT POWER (dBm)

P3dB = 52.61 dBm (182.39 W)

P1dB = 52.27 dBm (168.66 W)

Ideal

Actual

V

DD

= 50 Vdc, I

DQ

= 450 mA

f = 220 MHz

24

26

28

30

32

P

in

, INPUT POWER (dBm)

Figure 8. Third Order Intermodulation Distortion

versus Output Power

Figure 9. CW Output Power versus Input Power

MRF6V2150NR1 MRF6V2150NBR1

RF Device Data

Freescale Semiconductor

5

参数名称	属性值
Manufacture	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Single Dual Drain Dual Gate
Transistor Polarity	N-Channel
频率 Frequency	220 MHz
Gai	25 dB
Output Powe	150 W
Vds - Drain-Source Breakdown Voltage	110 V
Vgs - Gate-Source Breakdown Voltage	- 0.5 V, 12 V
最大工作温度 Maximum Operating Temperature	+ 150 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TO-272 WB EP
系列 Packaging	Reel
最小工作温度 Minimum Operating Temperature	- 65 C
工厂包装数量 Factory Pack Quantity	500
Vgs th - Gate-Source Threshold Voltage	1.62 V
Unit Weigh	2 g

	MRF6V2150NBR1	MRF6V2150NBR5	MRF6V2150NR1
描述	transistors RF mosfet vhv6 150w	transistors RF mosfet vhv6 150w latrl N-Ch SE broadband mosfet	transistors RF mosfet vhv6 150w
Manufacture	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET
RoHS	Yes	Yes	Yes
Configurati	Single Dual Drain Dual Gate	Single Dual Drain Dual Gate	Single Dual Drain Dual Gate
Transistor Polarity	N-Channel	N-Channel	N-Channel
频率 Frequency	220 MHz	220 MHz	220 MHz
Gai	25 dB	25 dB	25 dB
Output Powe	150 W	150 W	150 W
Vds - Drain-Source Breakdown Voltage	110 V	110 V	110 V
Vgs - Gate-Source Breakdown Voltage	- 0.5 V, 12 V	- 0.5 V, 12 V	- 0.5 V, 12 V
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	TO-272 WB EP	TO-272 WB EP	TO-270 WB EP
系列 Packaging	Reel	Reel	Reel
最小工作温度 Minimum Operating Temperature	- 65 C	- 65 C	- 65 C
工厂包装数量 Factory Pack Quantity	500	50	500
Vgs th - Gate-Source Threshold Voltage	1.62 V	1.62 V	1.62 V
Unit Weigh	2 g	2 g	1.646 g

MRF6V2150NBR1

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