DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
BYG85B
Fast soft-recovery rectifier
Product specification
1998 Nov 25
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Shipped in 12 mm embossed tape.
handbook, 4 columns
BYG85B
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
cathode
band
k
a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
average forward current
T
tp
= 100
°C;
averaged over any
20 ms period; see Figs 2 and 7
T
amb
= 60
°C;
AL
2
O
3
PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
T
amb
= 60
°C;
epoxy PCB mounting
(see Fig.11); averaged over any
20 ms period; see Fig.3
T
tp
= 100
°C;
see Fig.3
T
amb
= 60
°C;
AL
2
O
3
PCB mounting;
see Fig.5
T
amb
= 60
°C;
epoxy PCB mounting;
see Fig.6
CONDITIONS
MIN.
−
−
−
−
MAX.
100
100
2.5
1.3
V
V
A
A
UNIT
I
F(AV)
average forward current
−
0.98
A
I
FRM
I
FRM
I
FRM
I
FSM
T
stg
T
j
repetitive peak forward current
repetitive peak forward current
repetitive peak forward current
−
−
−
−
−65
−65
23
12
8.5
35
+175
+175
A
A
A
A
°C
°C
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
storage temperature
junction temperature
1998 Nov 25
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
reverse current
CONDITIONS
I
F
= 2 A; T
j
= T
j max
; see Fig.8
I
F
= 2 A; see Fig.8
I
R
= 0.1 mA
V
R
= V
RRMmax
; see Fig.9
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.9
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.13
f = 1 MHz; V
R
= 0; see Fig.10
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.12
MIN.
−
−
120
−
−
−
TYP.
−
−
−
−
−
−
BYG85B
MAX.
0.78
0.98
−
5
150
12.5
V
V
V
UNIT
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse
recovery current
−
−
110
−
−
2
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm,
see Fig.11.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.11.
For more information please refer to the
‘General Part of associated Handbook’.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1998 Nov 25
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
GRAPHICAL DATA
MBK210
BYG85B
handbook, halfpage
5
IF(AV)
(A)
handbook, halfpage
2.0
MBK211
4
IF(AV)
(A)
1.6
3
1.2
2
0.8
(1)
(2)
1
0.4
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
160
200
Tamb (°C)
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5; Switched mode application;
Device mounted as shown in Fig.11.
1: epoxy PCB
2: Al
2
O
3
PCB.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, full pagewidth
30
MBK212
IFRM
(A)
δ
= 0.05
20
0.1
10
0.2
0.5
1.0
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 100
°C;
R
th j-tp
= 25 K/W.
V
RRMmax
during 1 -
δ;
curves include derating for T
j max
at V
RRM
= 100 V.
Fig.4
Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Nov 25
4
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYG85B
handbook, full pagewidth
20
MBK213
IFRM
(A)
16
δ
= 0.05
12
8
0.1
0.2
4
0.5
1.0
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 100 K/W.
V
RRMmax
during 1 -
δ;
curves include derating for T
j max
at V
RRM
= 100 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
MBK214
IFRM
(A)
8
δ
= 0.05
6
0.1
4
0.2
0.5
1.0
2
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 150 K/W.
V
RRMmax
during 1 -
δ;
curves include derating for T
j max
at V
RRM
= 100 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1998 Nov 25
5
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