DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG80 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1997 Nov 25
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
UL 94V-O classified plastic
package
•
Shipped in 12 mm embossed tape.
Top view
Side view
handbook, 4 columns
BYG80 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
cathode
band
k
a
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
V
R
continuous reverse voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
I
F(AV)
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
I
F(AV)
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
T
amb
= 60
°C;
AL
2
O
3
PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
T
tp
= 100
°C;
see Figs 2, 3 and 4
averaged over any 20 ms period;
see also Figs 17, 18 and 19
−
−
−
−
−
−
−
−
−
−
−
−
−
50
100
150
200
300
400
600
2.4
2.3
2.0
1.25
1.15
0.95
V
V
V
V
V
V
V
A
A
A
A
A
A
−
−
−
−
−
−
−
50
100
150
200
300
400
600
V
V
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1997 Nov 25
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
I
F(AV)
PARAMETER
average forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
I
FRM
repetitive peak forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
I
FRM
repetitive peak forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
I
FRM
repetitive peak forward current
BYG80A to D
BYG80F; BYG80G
BYG80J
I
FSM
non-repetitive peak forward current t = 8.3 ms half sine wave; T
j
= 25
°C
prior to surge; V
R
= V
RRMmax
BYG80A to D
BYG80F; BYG80G; BYG80J
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Fig.20
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
T
amb
= 60
°C;
epoxy PCB mounting;
see Figs 14, 15 and 16
T
amb
= 60
°C;
AL
2
O
3
PCB mounting;
see Figs 11, 12 and 13
T
tp
= 100
°C;
see Figs 8, 9 and 10
−
−
−
−
−
−
−
−
−
−
−
−
−65
−65
CONDITIONS
T
amb
= 60
°C;
epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80 series
MIN.
−
−
−
MAX.
0.95
0.85
0.65
21
21
18
11
11
9
8
8
6
36
32
10
+175
+175
A
A
A
A
A
A
A
A
A
A
A
A
A
A
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYG80A to D
BYG80F; BYG80G
BYG80J
V
F
forward voltage
BYG80A to D
BYG80F; BYG80G
BYG80J
I
F
= 1 A; see Figs 21, 22 and 23
−
−
−
−
−
−
0.93
0.98
1.20
V
V
V
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 21, 22 and 23
MIN.
−
−
−
TYP.
−
−
−
MAX.
0.67
0.73
0.96
V
V
V
UNIT
1997 Nov 25
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
V
(BR)R
PARAMETER
reverse avalanche
breakdown voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
I
R
I
R
reverse current
reverse current
BYG80A to D
BYG80F; BYG80G and J
t
rr
reverse recovery time
BYG80A to D
BYG80F; BYG80G and J
C
d
diode capacitance
BYG80A to D
BYG80F; BYG80G
BYG80J
dI
R
--------
dt
maximum slope of reverse
recovery current
BYG80A to D
BYG80F; BYG80G and J
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
CONDITIONS
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.28
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.29
f = 1 MHz; V
R
= 0; see Fig.26
−
−
−
90
70
65
V
R
= V
RRMmax
;
see Figs 24 and 25
V
R
= V
RRMmax
; T
j
= 165
°C;
see Figs 24 and 25
CONDITIONS
I
R
= 0.1 mA
55
110
165
220
330
440
675
−
−
−
−
−
−
−
−
−
MIN.
BYG80 series
TYP.
MAX.
UNIT
−
−
−
−
−
−
−
10
V
V
V
V
V
V
V
µA
−
−
−
−
−
−
−
−
100
150
25
50
−
−
−
µA
µA
ns
ns
pF
pF
pF
−
−
−
−
3
4
A/µs
A/µs
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm,
see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.27.
For more information please refer to the
“General Part of associated Handbook”.
1997 Nov 25
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
MGL081
BYG80 series
handbook, halfpage
4
handbook, halfpage
4
MBK454
IF(AV)
(A)
3
IF(AV)
(A)
3
2
2
1
1
0
0
100
Ttp
(oC)
200
0
0
40
80
120
160
200
Ttp (°C)
BYG80A to D
Switched mode application; V
R
= V
RRMmax
;
δ
= 0.5; a = 1.42.
BYG80F and G
Switched mode application; V
R
= V
RRMmax
;
δ
= 0.5; a = 1.42.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
4.0
MGL094
handbook, halfpage
2
MGL079
IFAV
(A)
3.0
IF(AV)
(A)
1.5
(1)
2.0
1
(2)
1.0
0.5
0
0
40
80
120
200
160
Ttp (
ο
C)
0
0
100
Tamb (
ο
C)
200
BYG80J
Switched mode application.
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.42.
BYG80A to D
Switched mode application; V
R
= V
RRMmax
;
δ
= 0.5; a = 1.42
Device mounted as shown in Fig.27;
1: Al
2
O
3
PCB; 2: epoxy PCB.
Fig.4
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1997 Nov 25
5
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