VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 4 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum
temperature
operating
junction
• For PFC CRM/CCM, snubber operation
Cathode
Anode
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB
(DO-214AA)
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
4A
600 V
1.2 V
30 ns
175 °C
SMB (DO-214AA)
Single
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
Note
(1)
Mounted on PCB with minimum pad size
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
L
= 76 °C
T
J
= 25 °C
(1)
TEST CONDITIONS
VALUES
600
4
55
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 4 A
I
F
= 4 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.6
1.2
-
-
5.7
MAX.
-
1.95
1.4
3
100
-
μA
pF
V
UNITS
Revision: 07-Sep-17
Document Number: 94775
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
30
35
-
22
37
3.4
5.2
40
103
MAX.
-
-
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Approximate Weight
Marking device
Note
(1)
Mounted on PCB with minimum pad size
Case style SMB (DO-214AA)
SYMBOL
T
J
, T
Stg
R
thJC (1)
R
thJA
(1)
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
-
-
0.1
0.003
4H6
MAX.
175
18
UNITS
°C
°C/W
90
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
175 °C
10
1
0.1
25 °C
0.01
0.001
0.0001
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
150 °C
125 °C
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 25 °C
0.1
0.0
I
R
- Reverse Current (μA)
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 07-Sep-17
Document Number: 94775
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
8
100
C
T
- Junction Capacitance (pF)
Average Power Loss (W)
7
6
5
4
3
2
1
RMS Limit
10
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1
0
100
200
300
400
500
600
0
0
1
2
3
4
5
6
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
200
50
45
40
I
F
= 4 A, 125 °C
Allowable Case Temperature (°C)
180
160
140
t
rr
(ns)
120
100
80
60
40
20
0
0
1
2
3
4
5
6
DC
35
30
25
20
15
10
100
1000
typical value
I
F
= 4 A, 25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery vs. dI
F
/dt
250
200
I
F
= 4 A, 125 °C
Q
rr
(nC)
150
100
I
F
= 4 A, 25 °C
50
typical value
100
1000
0
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Revision: 07-Sep-17
Document Number: 94775
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4EGH06-M3
www.vishay.com
(3)
Vishay Semiconductors
t
rr
t
a
t
b
I
F
0
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
4
2
E
3
G
4
H
5
06
6
-M3
7
Vishay Semiconductors product
Current rating (4 = 4 A)
Circuit configuration:
E = single diode
-
-
-
-
G = SMB package
Process type,
H = hyperfast recovery
Voltage code (06 = 600 V)
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-4EGH06-M3/5BT
QUANTITY PER TUBE
5BT
MINIMUM ORDER QUANTITY
3200
PACKAGING DESCRIPTION
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95401
www.vishay.com/doc?95472
www.vishay.com/doc?95404
Revision: 07-Sep-17
Document Number: 94775
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMB
DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode band
Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 95401
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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