DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG50 series
Controlled avalanche rectifiers
Preliminary specification
1996 May 24
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
UL 94V-O classified plastic
package
•
Shipped in 12 mm embossed tape.
Top view
Side view
handbook, 4 columns
BYG50 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
DESCRIPTION
DO-214AC; SOD106 surface
mountable package with glass
passivated chip.
cathode
band
k
a
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
V
R
continuous reverse voltage
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
I
F(AV)
average forward current
averaged over any 20 ms
period; T
tp
= 100
°C;
see Fig.2
averaged over any 20 ms
period; Al
2
O
3
PCB mounting (see
Fig.7); T
amb
= 60
°C;
see Fig.3
averaged over any 20 ms
period; epoxy PCB mounting
(see Fig.7); T
amb
= 60
°C;
see Fig.3
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
−
−
−
−
−
−
−
200
400
600
800
1000
2.1
1.0
V
V
V
V
V
A
A
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
−
0.7
A
−
30
A
1996 May 24
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
SYMBOL
E
RSM
PARAMETER
non-repetitive peak reverse avalanche
energy
BYG50D to J
BYG50K and M
CONDITIONS
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
MIN.
MAX.
UNIT
−
−
−65
see Fig.4
−65
10
7
+175
+175
mJ
mJ
°C
°C
T
stg
T
j
storage temperature
junction temperature
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
I
R
t
rr
reverse current
reverse recovery time
V
R
= V
RRMmax
; see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.6
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max;
see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
300
500
700
900
1100
−
−
−
−
−
−
−
−
−
−
2
1
100
−
−
−
−
−
−
V
V
V
V
V
µA
µA
µs
MIN.
−
−
TYP.
−
−
MAX.
0.85
1.00
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm,
see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1996 May 24
3
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
GRAPHICAL DATA
BYG50 series
handbook, halfpage
4
MBH396
handbook, halfpage
2.0
MBH397
IF(AV)
(A)
3
IF(AV)
(A)
1.6
1.2
2
0.8
1
0.4
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
160
200
Tamb (°C)
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
Device mounted as shown in Fig.7
Solid line: Al
2
O
3
PCB; dotted line: epoxy PCB.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGD483
200
handbook, halfpage
Tj
(°C)
160
handbook, halfpage
10
MBH398
IF
(A)
8
120
6
80
D
40
G
J
K
M
4
2
0
0
400
800
VR (V)
1200
0
0
0.4
0.8
1.2
1.6
VF (V)
2.0
Device mounted as shown in Fig.7.
Solid line: Al
2
O
3
PCB.
Dotted line: epoxy PCB.
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
Fig.4
Maximum permissible junction temperature
as a function of reverse voltage.
Fig.5
Forward current as a function of forward
voltage; maximum values.
1996 May 24
4
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
10
3
handbook, halfpage
IR
(µA)
2
MGC739
50
10
4.5
50
10
2.5
1
0
40
80
120
160
200
Tj (
o
C)
1.25
MSB213
V
R
= V
RMMmax
.
Dimensions in mm.
Fig.6
Reverse current as a function of junction
temperature; maximum values.
Fig.7
Printed-circuit board for surface mounting.
handbook, full pagewidth
DUT
+
IF
(A)
0.5
1
Ω
t rr
10
Ω
25 V
50
Ω
0
0.25
0.5
IR
(A)
1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; t
r
≤
7 ns.
Source impedance: 50
Ω;
t
r
≤
15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
1996 May 24
5
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