BCV26
Discrete POWER & Signal
Technologies
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
40
10
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BCV26
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã
1997 Fairchild Semiconductor Corporation
BCV26
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 100 nA, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
40
10
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, I
B
= 0.1 mA
4,000
10,000
20,000
1.0
1.5
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
C
Current Gain - Bandwidth Product
Collector Capacitance
I
C
= 30 mA, V
CE
= 5.0 V,
f = 100 MHz
V
CB
= 30 V, I
E
= 0, f = 1.0 MHz
220
3.5
MHz
pF
Typical Characteristics
50
40
30
20
10
0
0.01
- 40 °C
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain
vs Collector Current
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β
= 1000
1.2
- 40 ºC
125 °C
0.8
25 °C
125 ºC
25 °C
0.4
0.1
I
C
- COLLECTOR CURRENT (A)
1
0
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
BCV26
PNP Darlington Transistor
(continued)
Typical Characteristics
(continued)
V
BEON
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
2
β
= 1000
- 40 ºC
25 °C
125 ºC
Base Emitter ON Voltage vs
Collector Current
2
1.6
1.2
125 ºC
1.6
1.2
0.8
0.4
0
0.001
- 40 ºC
25 °C
0.8
0.4
0
0.001
V
CE
= 5V
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
Collector-Cutoff Current
vs. Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
10
CAPACITANCE (pF)
CB
Input and Output Capacitance
vs Reverse Bias Voltage
16
f = 1.0 MHz
12
= 15V
1
8
C
ib
4
C
ob
0.1
0.01
25
50
75
100
T
A
- AMBIENT TEMPERATURE ( º C)
125
0
0.1
1
10
REVERSE VOLTAGE (V)
100
Power Dissipation vs
Ambient Temperature
350
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
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E
2
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TM
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®
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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