SO
D1
23W
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
Rev. 1 — 11 October 2011
Product data sheet
1. Product profile
1.1 General description
400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat
lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient
overvoltage protection in high-temperature applications.
1.2 Features and benefits
Rated peak pulse power:
P
PPM
= 400 W (350 W for 3V3)
Reverse standoff voltage range:
V
RWM
= 3.3 V to 64 V
Reverse current: I
RM
= 0.001
A
Very low package height: 1 mm
High temperature stability T
j
185
C
Small plastic package suitable for
surface-mounted design
AEC-Q101 qualified
1.3 Applications
Power supply protection
Automotive application
Industrial application
Power management
High-temperature applications
1.4 Quick reference data
Table 1.
Symbol
P
PPM
V
RWM
[1]
[2]
Quick reference data
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
[1][2]
Min
-
3.3
Typ
-
-
Max
400
64
Unit
W
V
In accordance with IEC 61643-321 (10/1000
s
current waveform).
For PTVS3V3S1UTR: P
PPM
= 350 W
NXP Semiconductors
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PTVSxS1UTR series
[1]
Type number
[1]
Description
plastic surface-mounted package; 2 leads
Version
SOD123W
-
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 4.
Marking codes
Marking code
C2
C3
C4
C5
C6
C7
C8
C9
CA
CB
CC
CD
CE
CF
CG
CH
CJ
CK
Type number
PTVS20VS1UTR
PTVS22VS1UTR
PTVS24VS1UTR
PTVS26VS1UTR
PTVS28VS1UTR
PTVS30VS1UTR
PTVS33VS1UTR
PTVS36VS1UTR
PTVS40VS1UTR
PTVS43VS1UTR
PTVS45VS1UTR
PTVS48VS1UTR
PTVS51VS1UTR
PTVS54VS1UTR
PTVS58VS1UTR
PTVS60VS1UTR
PTVS64VS1UTR
-
Marking code
CL
CM
CN
CP
CR
CS
CT
CU
CV
CW
CX
CY
CZ
D1
D2
D3
D4
-
Type number
PTVS3V3S1UTR
PTVS5V0S1UTR
PTVS6V0S1UTR
PTVS6V5S1UTR
PTVS7V0S1UTR
PTVS7V5S1UTR
PTVS8V0S1UTR
PTVS8V5S1UTR
PTVS9V0S1UTR
PTVS10VS1UTR
PTVS11VS1UTR
PTVS12VS1UTR
PTVS13VS1UTR
PTVS14VS1UTR
PTVS15VS1UTR
PTVS16VS1UTR
PTVS17VS1UTR
PTVS18VS1UTR
PTVSXS1UTR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
2 of 12
NXP Semiconductors
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
[1][2]
[1]
Min
-
-
Max
400
see
Table 9
and
10
50
185
+185
+185
Unit
W
I
FSM
T
j
T
amb
T
stg
[1]
[2]
non-repetitive peak forward single half-sine
current
wave; t
p
= 8.3 ms
junction temperature
ambient temperature
storage temperature
-
-
55
65
A
C
C
C
In accordance with IEC 61643-321 (10/1000
s
current waveform).
For PTVS3V3S1UTR: P
PPM
= 350 W
Table 6.
ESD maximum ratings
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
ESD
[1]
Parameter
electrostatic discharge
voltage
Conditions
IEC 61000-4-2; level 4
(contact discharge)
[1]
Min
-
Max
30
Unit
kV
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
PTVSXS1UTR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
3 of 12
NXP Semiconductors
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
6. Thermal characteristics
Table 8.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
220
130
70
18
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
thermal resistance from
junction to solder point
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 9.
Characteristics per type; PTVS3V3S1UTR to PTVS7V0S1UTR
T
j
= 25
C unless otherwise specified.
Type
number
PTVSxxx
S1UTR
Reverse
standoff
voltage
V
RWM
(V)
Max
3V3
5V0
6V0
6V5
7V0
3.3
5.0
6.0
6.5
7.0
Breakdown voltage
V
BR
(V)
I
R
= 10 mA
Min
5.20
6.40
6.67
7.22
7.78
Typ
5.60
6.70
7.02
7.60
8.20
Max
6.00
7.00
7.37
7.98
8.60
Reverse leakage current
I
RM
(A)
at V
RWM
Typ
5
5
5
5
3
Max
600
400
400
250
100
at V
RWM
T
j
= 150
C
Typ
17
17
17
17
9
Max
8.0
9.2
10.3
11.2
12.0
43.8
43.5
38.8
35.7
33.3
Clamping
voltage V
CL
(V)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
PPM
(A) Typ
1.0
2.5
3.2
3.6
4.3
PTVSXS1UTR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
4 of 12
NXP Semiconductors
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
Table 10. Characteristics per type; PTVS7V5S1UTR to PTVS64VS1UTR
T
j
= 25
C unless otherwise specified.
Type
number
PTVSxxx
S1UTR
Reverse
standoff
voltage
V
RWM
(V)
Max
7V5
8V0
8V5
9V0
10V
11V
12V
13V
14V
15V
16V
17V
18V
20V
22V
24V
26V
28V
30V
33V
36V
40V
43V
45V
48V
51V
54V
58V
60V
64V
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
Breakdown voltage
V
BR
(V)
I
R
= 1 mA
Min
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
15.60
16.70
17.80
18.90
20.00
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
47.80
50.00
53.30
56.70
60.00
64.40
66.70
71.10
Typ
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
16.40
17.60
18.75
19.90
21.00
23.35
25.60
28.10
30.40
32.80
35.10
38.70
42.10
46.80
50.30
52.65
56.10
59.70
63.15
67.80
70.20
74.85
Max
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
52.80
55.30
58.90
62.70
66.30
71.20
73.70
78.60
Reverse leakage current
I
RM
(A)
at V
RWM
Typ
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
Max
50
25
10
5
2.5
2.5
2.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
RWM
T
j
= 150
C
Typ
2
2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Max
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
31.0
29.4
27.8
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
Clamping
voltage V
CL
(V)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
I
PPM
(A) Typ
5.0
5.5
6.5
7.1
8.1
9.2
10.3
11.4
13.2
14.1
15.9
16.4
18.5
20.0
23.8
24.9
29.1
30.6
34.4
37.5
42.3
48.1
51.6
55.2
58.2
62.5
66.1
71.4
74.1
80.0
PTVSXS1UTR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 11 October 2011
5 of 12
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