MSRT10060(A)D thru MSRT100100(A)D
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1000 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 600 V - 1000 V
I
F(AV)
= 100 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MSRT10060(A)D
600
424
600
-55 to 150
-55 to 150
MSRT10080(A)D
800
566
800
-55 to 150
-55 to 150
MSRT100100(A)D
1000
707
1000
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
leg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 140 °C
t
p
= 8.3 ms, half sine
I
FM
= 100 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 150 °C
MSRT10060(A)D
100
2000
1.1
10
5
MSRT10080(A)D
100
2000
1.1
10
5
MSRT100100(A)D
100
2000
1.1
10
5
Unit
A
A
V
μA
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
Θjc
0.45
0.45
0.45
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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MSRT10060(A)D thru MSRT100100(A)D
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
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