DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1999 Nov 15
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Shipped in 8 mm embossed tape
•
Smallest surface mount
rectifier outline.
MAM061
BYD77 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec™
(1)
technology. This package is
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD77A
BYD77B
BYD77C
BYD77D
BYD77E
BYD77F
BYD77G
V
R
continuous reverse voltage
BYD77A
BYD77B
BYD77C
BYD77D
BYD77E
BYD77F
BYD77G
I
F(AV)
average forward current
BYD77A to D
BYD77E to G
I
F(AV)
average forward current
BYD77A to D
BYD77E to G
T
tp
= 105
°C;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 60
°C;
PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
−
−
−
−
−
−
−
−
−
50
100
150
200
250
300
400
2.00
1.85
0.85
0.80
V
V
V
V
V
V
V
A
A
A
A
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYD77A to D
BYD77E to G
I
FRM
repetitive peak forward current
BYD77A to D
BYD77E to G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
L = 120 mH; T
j
= 25
°C
prior to
surge; inductive load switched off
T
amb
= 60
°C;
see Figs 8 and 9
−
−
−
−
−65
−65
CONDITIONS
T
tp
= 105
°C;
see Figs 6 and 7
−
−
BYD77 series
MIN.
MAX.
15
13
8.5
8.0
25
10
+175
+175
A
A
A
A
A
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYD77A to D
BYD77E to G
V
F
forward voltage
BYD77A to D
BYD77E to G
V
(BR)R
reverse avalanche breakdown
voltage
BYD77A
BYD77B
BYD77C
BYD77D
BYD77E
BYD77F
BYD77G
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.14
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.14
t
rr
reverse recovery time
BYD77A to D
BYD77E to G
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.18
I
R
= 0.1 mA
55
110
165
220
275
330
440
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
100
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A;
see Figs 12 and 13
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 12 and 13
MIN.
−
−
−
−
TYP.
−
−
−
−
MAX.
0.75
0.83
0.98
1.05
V
V
V
V
UNIT
−
−
−
−
25
50
ns
ns
1999 Nov 15
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
C
d
PARAMETER
diode capacitance
BYD77A to D
BYD77E to G
dI
R
--------
dt
maximum slope of reverse recovery
current
BYD77A to D
BYD77E to G
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
−1
A/µs;
see Fig.17
CONDITIONS
f = 1 MHz; V
R
= 0 V;
see Fig.15
MIN.
−
−
BYD77 series
TYP.
50
40
MAX.
−
−
UNIT
pF
pF
−
−
−
−
4
5
A/µs
A/µs
VALUE
30
150
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.16.
For more information please refer to the
“General Part of associated Handbook”.
1999 Nov 15
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
MCD598
BYD77 series
MCD596
4
handbook, halfpage
IF(AV)
(A)
3
3
handbook, halfpage
I F(AV)
(A)
2
2
1
1
0
0
BYD77A to D
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
Ttp (
o
C)
200
0
0
BYD77E to G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
Ttp ( o C)
200
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MCD597
1.2
handbook, halfpage
I
F(AV)
(A)
0.8
handbook, halfpage
1.0
MCD595
I F(AV)
(A)
0.5
0.4
0
0
100
Tamb ( o C)
200
0
0
100
Tamb ( o C)
200
BYD77A to D
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
BYD77E to G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1999 Nov 15
5
测试/测量
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