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VSB2045-M3/54

产品描述schottky diodes & rectifiers 20 amp 45 volt
产品类别分立半导体    二极管   
文件大小81KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

VSB2045-M3/54概述

schottky diodes & rectifiers 20 amp 45 volt

VSB2045-M3/54规格参数

参数名称属性值
厂商名称Vishay(威世)
包装说明O-PALF-W2
针数2
制造商包装代码CASE P600
Reach Compliance Codeunknow
ECCN代码EAR99
Samacsys DescriptiVISHAY SEMICONDUCTOR - VSB2045-M3/54 - DIODE, RECTIFIER, 20A, 45V, P600
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.5 V
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流250 A
元件数量1
相数1
端子数量2
最高工作温度200 °C
最大输出电流6.5 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压45 V
表面贴装NO
技术SCHOTTKY
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
VSB2045
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.30 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
Photovoltaic Solar Cell Protection Schottky Rectifier
TMBS
®
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• ESD capability
P600
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• T
J
200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
OP
max. (AC mode)
T
J
max. (DC forward current)
20 A
45 V
250 A
0.42 V
150 °C
200 °C
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case:
P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction temperature range
Storage temperature range
Junction temperature in DC forward current
without reverse bias, t
1 h
Notes
(1)
With heatsink
(2)
With heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
V
RRM
I
F(AV) (1)
I
F(AV) (2)
I
FSM
T
OP
T
STG
T
J (3)
SYMBOL
VSB2045
V2045
45
20
6.5
250
- 40 to + 150
- 40 to + 175
200
V
A
A
°C
°C
°C
UNIT
Revision: 06-Jul-12
Document Number: 89391
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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