DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BYD43 series
Fast soft-recovery rectifiers
Product specification
Supersedes data of February 1995
1996 Jun 05
Philips Semiconductors
Product specification
Fast soft-recovery rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack.
handbook, 4 columns
BYD43 series
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
BYD43U
BYD43V
BYD43-16
BYD43-18
BYD43-20
V
RRM
repetitive peak reverse voltage
BYD43U
BYD43V
BYD43-16
BYD43-18
BYD43-20
I
F(AV)
average forward current
BYD43U and V
BYD43-16 to 20
I
F(AV)
average forward current
BYD43U and V
BYD43-16 to 20
I
FRM
repetitive peak forward current
BYD43U and V
BYD43-16 to 20
I
FRM
repetitive peak forward current
BYD43U and V
BYD43-16 to 20
T
amb
= 65
°C;
see Figs 8 and 9
−
−
6.0
3.2
A
A
T
tp
= 55
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 65
°C;
PCB mounting (see
Fig.20); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
T
tp
= 55
°C;
see Figs 6 and 7
−
−
11
6
A
A
−
−
−
−
−
−
−
−
−
1200
1400
1600
1800
2000
1.20
0.68
V
V
V
V
V
A
A
PARAMETER
non-repetitive peak reverse voltage
−
−
−
−
−
1300
1500
1700
1900
2100
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
0.65
0.30
A
A
1996 Jun 05
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifiers
BYD43 series
SYMBOL
I
FSM
PARAMETER
non-repetitive peak forward current
BYD43U and V
BYD43-16 to 20
CONDITIONS
t = 10 ms half sinewave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
MIN.
−
−
−65
MAX.
6
6
+175
+175
A
A
UNIT
T
stg
T
j
storage temperature
junction temperature
see Figs 12 and 13
°C
°C
−65
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYD43U and V
BYD43-16 to 20
V
F
forward voltage
BYD43U and V
BYD43-16 to 20
I
R
reverse current
BYD43U and V
BYD43-16 to 20
I
R
reverse current
BYD43U and V
BYD43-16 to 20
t
rr
reverse recovery time
BYD43U and V
BYD43-16 to 20
C
d
diode capacitance
BYD43U and V
BYD43-16 to 20
dI
R
--------
dt
maximum slope of reverse recovery
current
BYD43U and V
BYD43-16 to 20
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.20.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
60
120
UNIT
K/W
K/W
when switched from
I
F
= 1 A to V
R
≥
30 V
and dI
F
/dt =
−1
A/µs;
see Fig.21
V
R
= V
RRMmax
T
j
= 165
°C;
see Fig 16
T
j
= 125
°C;
see Fig 17
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig 22
f = 1 MHz; V
R
= 0 V;
see Figs 18 and 19
−
−
−
−
−
−
−
−
−
−
100
50
250
300
µA
µA
ns
ns
V
R
= V
RRMmax
;
see Figs 16 and 17
I
F
= 1 A;
see Figs 14 and 15
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
MIN.
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
MAX.
1.20
2.05
1.5
2.4
1
5
V
V
V
V
µA
µA
UNIT
20
15
−
−
pF
pF
−
−
−
−
5
5
A/µs
A/µs
1996 Jun 05
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifiers
GRAPHICAL DATA
BYD43 series
handbook, halfpage
1.6
MLC311
handbook, halfpage
0.8
MLC315
I F(AV)
(A)
1.2
lead length 10 mm
I F(AV)
(A)
0.6
lead length 10 mm
0.8
0.4
0.4
0.2
0
0
BYD43U and V
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp ( C)
o
0
200
0
BYD43-16 to 20
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
1.0
MLC312
I F(AV)
handbook, halfpage
0.5
MLC316
I F(AV)
(A)
0.8
(A)
0.4
0.6
0.3
0.4
0.2
0.2
0.1
0
0
100
Tamb (
o
C)
200
0
0
100
Tamb (
o
C)
200
BYD43U and V
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.20.
Switched mode application.
BYD43-16 to 20
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.20.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Jun 05
4
Philips Semiconductors
Product specification
Fast soft-recovery rectifiers
BYD43 series
handbook, full pagewidth
12
MLC320
I FRM
(A)
10
δ
= 0.05
8
0.1
6
0.2
4
0.5
2
1
0
10
2
10
1
1
10
10
2
10
3
t p (ms)
10
4
BYD43U and V
T
tp
= 55
°C;
R
th j-tp
= 60 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 1 400 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
8
MLC322
I FRM
(A)
6
δ
= 0.05
4
0.1
0.2
2
0.5
1
0
10
2
10
1
1
10
10
2
10
3
t p (ms)
10
4
BYD43-16 to 20
T
tp
= 55
°C;
R
th j-tp
= 60 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 2000 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 05
5
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