TRANSISTOR MODULE
SQD200A40/60
UL;E76102 M）
（
SQD200A
is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
V
CEX
＝400/600V
●
Low saturation voltage for higher efficiency.
●
High DC current gain h
FE
●
Isolated mounting base
●
V
EBO
10V for faster switching speed.
（Applications）
Motor Control（VVVF） AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
C1
E1
B1
B1X
●
I
C
＝200A,
95max
80±0.25
23
23
4½φ5.5
62max
48±0.25
15
1
2
3
B
2
E
2
B
1
X
C
1
E
1
C
1
M5×10
30max
110Tab
7
21
E1
C1
66
Unit：A
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
（M5）
Terminal（M5）
A.C.1minute
T
C
＝25℃
（ ）=pw≦1ms
V
BE
＝−2V
Conditions
（Tj＝25℃
unless otherwise specified）
Ratings
SQD200A40 SQD200A60
400
400
10
200（400）
200
12
1250
−40
to
＋150
−40
to
＋125
2500
2.7（28）
2.7（28）
380
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
Typical Value
600
600
Unit
V
V
V
A
A
A
W
℃
℃
V
N½m
(㎏f½B)
g
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
（SUS）
V
CEO
Item
Collector Cut-off Current
Emitter Cut-off Current
SQD200A40
Collector Emitter
Sustaning Voltage
SQD200A60
SQD200A40
SQD200A60
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
V
CB
＝V
CBO
V
EB
＝V
EBO
Ic＝1A
Conditions
Ratings
Min.
Max.
2.0
800
300
450
400
600
75
100
2.0
2.5
2.0
12.0
3.0
1.4
0.1
0.3
Unit
mA
mA
V
V
（SUS）
V
CEX
Ic＝40A，I
B2
＝−8A
Ic＝200A，V
CE
＝2V
Ic＝200A，V
CE
＝5V
Ic＝200A，I
B
＝2.7A
Ic＝200A，I
B
＝2.7A
Vcc＝300V，Ic＝200A
I
B1
＝4A，I
B2
＝−4A
−Ic＝200A
Transistor part
Diode part
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
V
V
μs
V
℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD200A40/60
Collector-Emitter Voltage V
ＣＥ
V）
（
Base-Emitter Voltage V
BE
V）
（
１
３
０
５
D.C. Current Gain
６
５
４
３
２
１
０
Saturation Characteristics
I
C
＝120A
I
C
＝200A
V
CE
V
BE
Typical
DC Current Gain h
FE
２
１
０
２
５
２
１
１
０
５
２
１
０
０
１
０
０
２
℃
125
Tj＝
25℃
Tj＝
V
CE
＝5V
V
CE
＝2V
Typical
I
C
＝
160A
I
C
＝200A
I
C
＝160A
I
C
＝120A
５
１
１
０
２
５
１
２
０
２
５
１
−１
０
２
５
１
０
０
２
５
１
１
０
２
Collector Current Ic
（A）
Base Current I（A）
B
５
Forward Bias Safe Operating Area
Pu
1
lse
４０
５
Reverse Bias Safe Operating Area
I
B2
＝−3A
I
B2
＝−8A
Collector Current Ic
（A）
１
２
０
５
２
１
０
１
50
0μ
s
1m
s
10
ms
IS
/B
５
２
１
０
０
５
５
１
１
０
２
５
Tc＝25℃
Non-Repetitive
Lim
ite
d
SOD200A
40
SOD200A
60
Collector Current Ic
（A）
２
00μ
W
s
ide
４０
０
Collector-Emitter Voltage V
CE
V）
（
８
０
IS/B
Lim
ited
Collector Reverse Current -Ic
（A）
１０
０
Collector Current Derating Factor
PT
Lim
ite
d
３０
５
３０
０
２０
５
２０
０
１０
５
１０
０
５
０
Tj＝125℃
１
２
０
２
５
０
０
QCA200
A40
QCA200
A60
１０
０
２０
０
３０
０
４０
０
５０
０
６０
０
７０
０
Collector-Emitter Voltage V
CE
V）
（
Forward Voltage of Free Wheeling Diode
Derating Factor %）
（
Maximum
Ｔ= ５
½２ ℃
６
０
４
０
２
０
０
０
P
T
Lim
ite
d
５
０
１０
０
１０
５
Case Temperature（℃）
（
Emitter-Collector Voltage V
ECO
V）
Transient Thermal Impedance
θ
（℃/W）
j-c
Switching Time
t
on
t
f ts
μs）
（
５
２
Collector Current Vs Switching Time
V
CC
＝300V
I
B1
＝4A
I
B2
＝−4A
Tj＝25℃
Typical
２
−
１
Maximum Transient Thermal Impedance
Characteristics
Max
Junction to case
50msec∼50sec
１
０
１
１
０
５
２
５
２
ms
50
s∼
0μ
０
10
０
１
ts
１
−２
０
５
１
０
０
５
２
４
０
８
０
１０
２
１０
６
２０
０
tf
ton
１
−１
０
０
２
１０ ２０ ５０ １ ２
０μ ０μ ０μ ½ ½
５ ½ ０ ½ ０ ½ ５０ １
０ １０ ２０ ０ ½
５ １½２½ ５½
½ ０ ０
０
５
１ ２
０ ０
５
０
Collector Current Ic
（A）
Time
t
sec）
（
２
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
