SMA6J
High junction temperature Transil™
Features
■
Peak pulse power:
– 600 W (10/1000 µs)
– 4 kW (8/20 µs)
Stand off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low clamping voltage versus standard series
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j
max: 175 °C
JEDEC registered package outline
A
■
■
■
■
K
Unidirectional
Bidirectional
■
■
SMA
(JEDEC DO-214AC)
Complies with the following standards
■
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3B
– 25 kV (human body model)
■
Description
The SMA6J Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 600 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provides a
better safety margin to protect sensitive circuits
with extended life time expectancy.
Packaged in SMA, this minimizes PCB space
consumption (SMA footprint in accordance with
IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
November 2007
Rev 2
1/10
www.st.com
10
Characteristics
SMA6J
1
Table 1.
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Characteristics
Absolute ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current for
unidirectional types
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
T
j
initial = T
amb
T
amb
= 55 °C
t
p
= 10 ms
T
j
initial = T
amb
Value
600
4
60
-65 to +175
-55 to +175
260
Unit
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th (j-l)
R
th (j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
30
120
Unit
°C/W
°C/W
Table 3.
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
R
D
Electrical characteristics - definitions (T
amb
= 25 °C)
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
@ V
RM
Peak pulse current
Voltage temperature
coefficient
Forward voltage
drop
Dynamic resistance
I
PP
Unidirectional
I
I
F
I
I
PP
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
Bidirectional
2/10
SMA6J
Table 4.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
max@V
RM
Type
25 °C 85 °C
µA
SMA6J5.0A/CA
SMA6J6.0A/CA
SMA6J6.5A/CA
SMA6J8.5A/CA
SMA6J10A/CA
SMA6J12A/CA
SMA6J13A/CA
SMA6J15A/CA
SMA6J18A/CA
SMA6J20A/CA
SMA6J24A/CA
SMA6J26A/CA
SMA6J28A/CA
SMA6J33A/CA
SMA6J40A/CA
SMA6J48A/CA
SMA6J58A/CA
SMA6J70A/CA
SMA6J85A/CA
SMA6J100A/CA
SMA6J130A/CA
SMA6J154A/CA
SMA6J170A/CA
SMA6J188A/CA
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
min
V
BR
@I
R
(1)
Characteristics
V
CL
@I
PP
R
D(2)
V
CL
@I
PP
R
D(2)
10/1000 µs 10/1000 µs 8/20 µs 8/20 µs
max
mA
V
9.1
9.5
A
68
61
56
Ω
0.029
0.034
0.040
0.070
0.093
0.133
0.154
0.206
0.288
0.354
0.516
0.600
0.697
0.963
1.42
2.04
2.97
4.38
6.45
9.03
14.9
22.1
30.0
48.5
max
V
A
Ω
0.021
0.022
0.024
0.041
0.040
0.056
0.054
0.075
0.108
0.132
0.184
0.213
0.253
0.356
0.511
0.736
0.863
1.27
1.85
2.58
4.24
6.00
7.39
8.97
αT
(3)
max
10-4/°C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.7
9.8
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
typ max
V
5.0 6.40 6.74 7.07 10
6.0 6.70 7.05 7.41 10
13.4 298
13.7 290
14.5 276
18.7 205
19.6 184
23.5 157
23.9 147
27.7 123
33.2 102
36.8 93
44.3 80
47.9 75
51.6 68
60.8 57
73.6 48
88.4 40
100
120
33
27
6.5 7.20 7.58 7.96 10 10.2
8.5
9.4
9.9
10.4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
13.3 41.7
15.7
18.8
20.4
37
31
29
10 11.1 11.7 12.3
12 13.3 14.0 14.7
13 14.4 15.2 15.9
15 16.7 17.6 18.5
18 20.0 21.1 22.1
20 22.2 23.4 24.5
24 26.7 28.1 29.5
26 28.9 30.4 31.9
28 31.1 32.7 34.4
33 36.7 38.6 40.6
40 44.4 46.7 49.1
48 53.3 56.1 58.9
58 64.4 67.8 71.2
70 77.8 81.9 86.0
85
94
99
117
152
180
199
220
104
123
159
189
209
231
23.6 25.1
28.3 21.5
31.4 19.4
37.8
16
40.9 14.9
44.0 13.8
51.9 11.8
62.8
75.4
91.1
110
134
157
204
242
275
328
9.7
8.1
6.7
5.5
4.6
3.8
3
2.4
2.2
2
146 22.5
172
223
19
15
100 111
130 144
154 171
170 189
188 209
265 12.6
292 11.3
323 10.3
1. Pulse test: t
p
<50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula
V
CLmax
= R
D
x I
PP
+ V
BRmax
3. To calculate V
BR
versus junction temperature, use the following formula:
V
BR
@ T
j
= V
BR
@ 25 °C x (1 +
αT
x (T
j
- 25))
50
%I
PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
0
t
r
t
p
t
3/10
Characteristics
SMA6J
Figure 1.
Peak power dissipation versus
initial junction temperature
Figure 2.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
%
110
100
90
80
70
60
1.0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
10.0
P
PP
(kW)
T
j
initial=25°C
T
j
(°C)
0.1
0.01
0.10
t
p
(ms)
1.00
10.00
Figure 3.
Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
IPP(A)
1.E+03
T
j
= 25°C
SMA6J5.0A/CA
SMA6J10A/CA
SMA6J15A/CA
t
p
= 20 µs
SMA6J26A/CA
SMA6J48A/CA
SMA6J100A/CA
SMA6J188A/CA
1.E+02
1.E+01
1.E+00
t
p
= 1 ms
VCL(V)
1.E-01
1
10
100
1000
4/10
SMA6J
Characteristics
Figure 4.
Junction capacitance versus
reverse applied voltage (typical
values) (SMA6JxxA)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
SMA6J5.0A
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values) (SMA6JxxCA)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
C(pF)
10000
10000
C(pF)
1000
SMA6J5.0CA
SMA6J13CA
1000
SMA6J13A
100
SMA6J26A
SMA6J26CA
100
SMA6J58A
SMA6J58CA
10
SMA6J188CA
10
1
10
V
R
(V)
100
SMA6J188A
1
1000
1
10
V
R
(V)
100
1000
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (printed
ciruit board FR4, S
Cu
= 1 cm
2
)
I
FM
(A)
1.E+01
Z
th(j-a)
/R
th(j-a)
1.00
T
j
=125°C
1.E+00
T
j
=25°C
0.10
1.E-01
V
FM
(V)
1.E-02
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
t
p
(S)
0.01
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (printed circuit
board FR4, e
Cu
= 35 µm)
Figure 9.
Leakage current versus junction
temperature (typical values)
R
th(j-a)
(°C/W)
130
120
110
100
90
1.E+02
80
70
60
50
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.E+01
1.E+03
1.E+04
I
R
(nA)
V
R
=V
RM
V
BR
≤
11.7V
V
BR
>
11.7V
S
CU
(cm
2
)
1.E+00
25
50
75
T
j
(°C)
100
125
150
175
5/10
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