DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD47 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1999 Nov 11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Shipped in 8 mm embossed tape
•
Smallest surface mount
rectifier outline.
MAM061
BYD47 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec™
(1)
technology. This package is
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
PARAMETER
non-repetitive peak reverse voltage
BYD47-16
BYD47-18
BYD47-20
V
RRM
repetitive peak reverse voltage
BYD47-16
BYD47-18
BYD47-20
I
F(AV)
average forward current
T
tp
= 105
°C;
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
T
amb
= 25
°C;
PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
T
tp
= 85
°C;
see Fig.4
T
amb
= 65
°C;
see Fig.5
I
FSM
T
stg
T
j
non-repetitive peak forward current
storage temperature
junction temperature
see Fig.7
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
−
−
−
−
1600
1800
2000
0.80
V
V
V
A
−
−
−
1700
1900
2100
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
I
F(AV)
average forward current
−
0.34
A
I
FRM
repetitive peak forward current
−
−
−
−65
−65
8.0
2.8
10
+175
+175
A
A
A
°C
°C
1999 Nov 11
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.8
I
F
= 1 A; see Fig.8
V
R
= V
RRMmax
;
see Fig.9
V
R
= V
RRMmax
; T
j
= 125
°C;
see Fig.9
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.12
f = 1 MHz; V
R
= 0 V; see Fig.10
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.13
BYD47 series
TYP.
−
−
−
−
−
MAX.
2.05
2.40
5
50
300
V
V
UNIT
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse recovery
current
15
−
−
5
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
30
150
UNIT
K/W
K/W
1999 Nov 11
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MLC194
BYD47 series
handbook, halfpage
1.6
handbook, halfpage
0.4
MLC195
I F(AV)
(A)
1.2
I F(AV)
(A)
0.3
0.8
0.2
0.4
0.1
0
0
100
T tp (
o
C)
200
0
0
100
Tamb (
o
C)
200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, full pagewidth
10
MLC198
I FRM
(A)
8
δ
= 0.05
6
0.1
4
0.2
2
0.5
1
0
10
2
10
1
1
10
10
2
10
3
t p (ms)
10
4
T
tp
= 85
°C;
R
th j-tp
= 30 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 2000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD47 series
MLC199
handbook, full pagewidth
3
I FRM
(A)
δ
= 0.05
2
0.1
0.2
1
0.5
1
0
10
2
10
1
1
10
10
2
10
3
t p (ms)
10
4
T
amb
= 65
°C;
R
th j-a
= 150 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 2000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, halfpage
3
MLC193
handbook, halfpage
200
MLC197
P
(W)
a = 3 2.5 2
2
1.57
1.42
Tj
(
o
C)
100
1
BYD47 16
18
20
0
0
0.4
I F(AV) (A)
0.8
0
0
1000
VR (V)
2000
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Solid line = V
RRM
;
δ
= 0.5.
Dotted line = V
RRM
;
δ
= 0.1.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
1999 Nov 11
5
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