NORMALLY-OFF SILICON
CARBIDE POWER JFET
SML100M12MSF
•
•
•
•
RDS(on)max of 0.150
High Temperature Operation Tj = 200°C
Low Gate Charge and Intrinsic Capacitance
Positive Temperature Coefficient and Temperature
Independent Switching Behaviour
APPLICATIONS
•
•
SMPS
Motor Drive
•
•
UPS
Induction Heating
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS
RDS(on)max
ID
IDM
PD
VGS
TJ
TJstg
Drain-Source Blocking Voltage
Drain-Source On-resistance
Available Drain Current
Pulsed Drain Current
Power Dissipation
DC Gate-Source Voltage
Operating Temperature
Storage Temperature
1200 V
0.15
24 A
34 A
70 W
-15 to +3 V
-55 to +200 °C
-55 to +225 °C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case, TC = 25°C
Min.
Typ.
1.8
Max.
2.5
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8965
Issue 2
Page 1 of 1
Website:
http://www.semelab-tt.com
NORMALLY-OFF SILICON
CARBIDE POWER JFET
SML100M12MSF
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
BVDSS
IDSS
VGS(th)
IGSS
Parameters
Drain-Source Blocking
Voltage
Drain-Source Leakage
Current
Gate Threshold Voltage
Gate-Source Leakage
Current
Test Conditions
VGS = 0V, ID = 1.0mA
VDS = 1200V, VGS = 0V
VDS = 1200V, VGS = -5V
VDS = 1.0V, ID = 34mA
Min.
1200
-
-
0.70
-
-
-
-
-
-
-
Typ.
-
-
0.11
1.00
0.25
0.1
0.09
0.29
28
9.3
20
30
70
642
69
68
Max.
-
1.0
Units
V
mA
-
1.25
1.5
mA
1.5
0.15
-
-
nC
-
-
-
-
-
-
-
pF
ns
V
V
GS
= 2.4V
V
GS
= -15V
I
D
= 13A, V
GS
= 3V, T
J
= 25°C
I
D
= 13A, V
GS
= 3V, T
J
= 175°C
VDS = 600V, ID = 13A,
VGS = 0V to +3V
V
DS
= 600V, I
D
= 13A,
CBP = 33nF, RCL = 110
RDS(on)
Qg
Qgs
ton
toff
tr
Ciss
Coss
Crss
(1)
Drain-Source On-resistance
Total Gate Charge
Gate-Source Charge
Turn-on Delay
(Resistive Load)
Turn-off Delay
(Resistive Load)
Rise time (Resistive Load)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
-
-
-
VDS = 100V
-
-
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8965
Issue 2
Page 2 of 2
NORMALLY-OFF SILICON
CARBIDE POWER JFET
SML100M12MSF
MECHANICAL DATA
Dimensions in mm (inches)
TO258 (TO-258AA)
Pin 1 – Gate
Pin 2 - Source
Pin 3 – Drain
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8965
Issue 2
Page 3 of 3
嵌入式系统
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