DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD37 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1999 Nov 16
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Smallest surface mount rectifier
outline
•
Shipped in 8 mm embossed tape.
handbook, 4 columns
BYD37 series
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
k
a
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD37D
BYD37G
BYD37J
BYD37K
BYD37M
V
R
continuous reverse voltage
BYD37D
BYD37G
BYD37J
BYD37K
BYD37M
I
F(AV)
average forward current
T
tp
= 105
°C;
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
T
amb
= 60
°C;
PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
T
tp
= 105
°C;
see Fig.4
T
amb
= 60
°C;
see Fig.5
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
−
−
−
−
−
−
200
400
600
800
1000
1.5
V
V
V
V
V
A
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
I
F(AV)
average forward current
−
0.6
A
I
FRM
repetitive peak forward current
−
−
−
13
5.5
20
A
A
A
1999 Nov 16
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
E
RSM
PARAMETER
non-repetitive peak reverse
avalanche energy
BYD37D to J
BYD37K and M
T
stg
T
j
storage temperature
junction temperature
see Fig.7
CONDITIONS
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
−
−
−65
−65
BYD37 series
MIN.
MAX.
UNIT
10
7
+175
+175
mJ
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Fig.8
I
F
= 1 A;
see Fig.8
V
(BR)R
reverse avalanche breakdown
voltage
BYD37D
BYD37G
BYD37J
BYD37K
BYD37M
I
R
reverse current
V
R
= V
RRMmax
; see Fig.9
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.9
t
rr
reverse recovery time
BYD37D to J
BYD37K and M
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse recovery
current
BYD37D to J
BYD37K and M
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
1999 Nov 16
3
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
30
150
UNIT
K/W
K/W
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25A;
see Fig.12
f = 1 MHz; V
R
= 0;
see Fig.10
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
−1
A/µs;
see Fig.13
I
R
= 0.1 mA
300
500
700
900
1100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
100
V
V
V
V
V
µA
µA
MIN.
−
−
TYP.
−
−
MAX.
1.1
1.3
V
V
UNIT
−
−
−
−
−
20
250
300
−
ns
ns
pF
−
−
−
−
6
5
A/µs
A/µs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MGA854
BYD37 series
handbook, halfpage
3
handbook, halfpage
0.8
MGA855
I F(AV)
(A)
I F(AV)
(A)
0.6
2
0.4
1
0.2
0
0
100
Ttp
(
o
C)
200
0
0
100
T amb (
o
C)
200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLB268
handbook, full pagewidth
16
I FRM
(A)
δ
= 0.05
12
0.1
8
0.2
4
0.5
1
0
10
2
10
1
1
10
10
2
10
3
t p (ms)
10
4
T
tp
= 105
°C;
R
th j-tp
= 30 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 16
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD37 series
MLB267
handbook, full pagewidth
6
I FRM
(A)
δ
= 0.05
4
0.1
0.2
2
0.5
1
0
10
2
10
1
1
10
10
2
10
3
t p (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 150 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, halfpage
2.4
MGA869
handbook, halfpage
200
MGA861
P
(W)
1.6
a=3
2.5 2 1.57
1.42
Tj
(
o
C)
100
0.8
D
G
J
K
M
0
0
0.8
I F(AV) (A)
1.6
0
0
400
800
VR (V)
1200
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
1999 Nov 16
5
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