MIXA30W1200TML
Six-Pack
XPT IGBT
V
CES
= 1200 V
I
C25
= 43 A
V
CE(sat)
= 1.8 V
Part name
(Marking on product)
MIXA30W1200TML
10, 23
14
8
13
NTC
18
17
22
21
11, 12
15, 16
19, 20
E72873
7
6
5
9, 24
4
3
2
1
Pin configuration see outlines.
Features:
• High level of integration
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
• Temperature sense included
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• E1 package
• Assembly height is 17.1 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• UL registered E72873
IXYS reserves the right to change limits, test conditions and dimensions.
20110118b
© 2011 IXYS All rights reserved
1-6
MIXA30W1200TML
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
SC
(SCSOA)
R
thJC
R
thCH
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 25 A; V
GE
= 15 V
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A
inductive load
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 39
W
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
43
30
150
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
1.8
2.1
5.4
5.9
0.02
0.3
76
70
40
250
100
2.5
3.0
2.1
6.5
0.15
500
V
GE
= ±15 V; R
G
= 39
W;
V
CEK
= 1200 V
T
VJ
= 125°C
V
CE
= 900 V; V
GE
= ±15 V;
T
VJ
= 125°C
R
G
= 39
W;
t
p
= 10 µs; non-repetitive
(per IGBT)
0.24
100
75
A
A
0.84
K/W
K/W
Diode D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 30 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -600 A/µs
I
F
= 30 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
max.
1200
44
29
Unit
V
A
A
V
V
µC
A
ns
mJ
1.95
1.95
3.5
30
350
0.9
2.2
1.2
0.4
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20110118b
© 2011 IXYS All rights reserved
2-6
MIXA30W1200TML
Temperature Sensor NTC
Symbol
R
25
B
25/50
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.75
Ratings
typ. max.
5.0
3375
5.25
Unit
kW
K
100000
10000
R
[Ω]
1000
100
10
0
25
50
75
100
125
150
T
C
[°C]
Typ. NTC resistance vs. temperature
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
F
C
d
S
d
A
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting force
creep distance on surface
strike distance through air
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
2500
-
Unit
°C
°C
°C
V~
N
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
40
12.7
12.7
40
80
g
IXYS reserves the right to change limits, test conditions and dimensions.
T
C
= 25°C unless otherwise stated
20110118b
© 2011 IXYS All rights reserved
3-6
MIXA30W1200TML
Circuit Diagram
10, 23
14
8
13
NTC
18
17
22
21
11, 12
15, 16
19, 20
7
6
5
9, 24
4
3
2
1
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Part number
M
I
X
A
30
W
1200
T
ML
= Module
= IGBT
= XPT
= standard
= Current Rating [A]
= 6-Pack
= Reverse Voltage [V]
= NTC
= E1-Pack
XXXXXX..... YWWx XXX...
Logo
Part name
Date Code
Prod. Code UL
Ordering
Standard
Part Name
MIXA 30 W 1200 TML
Marking on Product
MIXA30W1200TML
Delivering Mode Base Qty Ordering Code
Box
10
510798
20110118b
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
4-6
MIXA30W1200TML
IGBT T1 - T6
50
40
30
I
C
[A]
20
V
GE
= 15 V
50
40
V
GE
= 15 V
17 V
19 V
13 V
11 V
T
VJ
= 25°C
T
VJ
= 125°C
I
C
30
T
VJ
= 125°C
[A]
20
9V
10
0
10
0
0
1
V
CE
[V]
2
3
0
1
2
V
CE
[V]
3
4
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
I
C
= 25 A
V
CE
= 600 V
15
50
40
I
C
30
[A]
V
GE
[V]
T
VJ
= 125°C
10
20
10
0
5
T
VJ
= 25°C
5
6
7
8
9
V
GE
[V]
10
11
12
13
0
0
20
40
60
80
100
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
E
on
Fig. 3 Typ. tranfer characteristics
6
5
E
4.0
3.5
3.0
E
off
E
[mJ]
E
off
E
on
R
G
= 39
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
4
2.5
2.0
1.5
1.0
[mJ]
3
2
1
0
I
C
=
25 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
0.5
0
10
20
30
40
50
0.0
20
40
60
80
100 120 140 160
I
C
[A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
R
G
[Ω ]
Fig. 6 Typ. switching energy vs. gate resistance
20110118b
© 2011 IXYS All rights reserved
5-6
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