Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BUL381
DESCRIPTION
・With
TO-220C package
・High
voltage capability
・Very
high switching speed
APPLICATIONS
・Designed
for use in lighting
applications and low cost
switch-mode power supplies.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
LIMITING VALUES
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak (t
p
<5 ms)
Base current
Base current-Peak (t
p
<5 ms)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
9
5
8
2
4
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.78
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
I
CES
I
CEO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Emitter-base voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA; L=25mH
I
E
=10mA; I
C
=0
I
C
=1A ;I
B
=0.2A
I
C
=2A ;I
B
=0.4A
I
C
=3A ;I
B
=0.8A
I
C
=1A ;I
B
=0.2A
I
C
=2A ;I
B
=0.4A
V
CE
=800V V
BE
=0
T
j
=125℃
V
CE
=400V; I
B
=0
I
C
=2A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
8
10
MIN
400
TYP.
BUL381
MAX
UNIT
V
0.5
0.7
1.1
1.1
1.2
100
500
250
V
V
V
V
V
μA
μA
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
V
CC
=250V ,I
C
=2A
I
B1
=- I
B2
=0.4A
t
p
=30μs
1.4
1
2.2
0.8
μs
μs
μs
JMnic