GWM 160-0055X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G1
S1
G3
S3
G5
S5
L1
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 55 V
= 150 A
I
D25
R
DSon typ.
= 2.7 mW
Straight leads
Surface Mount Device
G2
S2
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
Conditions
Conditions
T
J
= 25°C to 150°C
Maximum Ratings
55
±
20
150
115
120
75
V
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
-o
e
min.
2.5
0.1
0.2
105
tbd
tbd
140
125
550
120
0.17
0.60
0.004
1.3
1.0
1.6
Characteristic Values
typ.
2.7
4.5
max.
3.3
4.5
1
mW
mW
V
µA
mA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
(T
J
= 25°C, unless otherwise specified)
R
DSon 1)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
1)
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 12 V; I
D
= 160 A
inductive load
V
GS
= 10 V; V
DS
= 24 V
I
D
= 100 A; R
G
= 39
Ω;
T
J
= 125°C
with heat transfer paste (IXYS test setup)
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
Recommended replacements: MTI 120W55GA / MTI 120W55GC
IXYS reserves the right to change limits, test conditions and dimensions.
20110307i
p
h
a
T
J
= 25°C
T
J
= 125°C
on chip level at
V
GS
= 10 V; I
D
= 100 A
T
J
= 25°C
T
J
= 125°C
s
u
A
A
A
A
t
V
© 2011 IXYS All rights reserved
1-6
GWM 160-0055X1
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
V
SD
t
rr
Q
RM
I
RM
(diode) I
F
= 100 A; V
GS
= 0 V
I
F
= 100 A; -di
F
/dt = 800 A/µs; V
R
= 24 V
typ.
1.0
40
0.42
20
max.
1.3
V
ns
µC
A
Component
Symbol
I
RMS
T
J
T
stg
V
ISOL
F
C
Symbol
R
pin to chip 1)
I
ISOL
< 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Conditions
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
Maximum Ratings
300
-55...+175
-55...+125
1000
50 - 250
A
°C
°C
V~
min.
typ.
0.6
160
max.
C
P
Weight
1)
-o
25
coupling capacity between shorted
pins and mounting tab in the case
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
IXYS reserves the right to change limits, test conditions and dimensions.
p
h
a
s
e
u
mW
Characteristic Values
t
N
pF
g
20110307i
© 2011 IXYS All rights reserved
2-6
GWM 160-0055X1
S
traight
L
eads
1,5
GWM 160-0055X1-SL
37,5 +0,20
(11x) 3 ±0,05
1 ±0,05
5 ±0,05
1 ±0,05
0,5 ±0,02
S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1
25 +0,20
53 ±0,15
L3
L2
L1
L-
L+
4,5
12 ±0,05
4 ±0,05
(3x) 6 ±0,05
37,5 +0,20
1,5
(11x) 3 ±0,05
e
s
L1
L-
L+
1 ±0,05
S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1
a
L2
-o
39 ±0,15
S
urface
M
ount
D
evice
GWM 160-0055X1-SMD
5 ±0,05
p
h
L3
4,5
12 ±0,05
4 ±0,05
(3x) 6 ±0,05
u
0,5 ±0,02
R1 ±0,2
1 ±0,05
5 ±0,10
Leads
Straight
SMD
Ordering
Standard
Standard
Part Name &
Packing Unit Marking
GWM 160-0055X1 - SL
GWM 160-0055X1 - SMD
t
25 +0,20
5° ±2°
2,1
IXYS reserves the right to change limits, test conditions and dimensions.
2,1
Part Marking
GWM 160-0055X1
GWM 160-0055X1
Delivering Mode
Blister
Blister
Base Qty.
28
28
Ordering
Code
505 230
504 862
20110307i
© 2011 IXYS All rights reserved
3-6
GWM 160-0055X1
1.2
I
DSS
= 0.25 mA
350
300
250
V
DS
= 24 V
V
DSS
[V] normalized
1.1
I
D
- [A]
1.0
0.9
0.8
0.7
-25
200
150
100
50
0
T
J
= 125°C
T
J
= 25°C
0
25
50
75
100
125
150
3
4
5
T
J
[°C]
Fig. 1 Drain source breakdown voltage V
DSS
vs. junction temperature T
J
V
GS
[V]
6
7
8
Fig. 2 Typical transfer characteristic
350
300
250
u
250
200
V
GS
=
20 V
15 V
350
10 V
7V
T
J
= 25°C
6.5 V
t
V
GS
=
20 V
15 V
10 V
TJ = 125°C
7V
6.5 V
6V
5.5 V
5V
300
I
D
[A]
6V
5.5 V
5V
I
D
[A]
200
150
100
50
0
e
s
-o
150
100
50
0
0
1
2
Fig. 3 Typical output characteristic
a
V
DS
[V]
3
4
5
6
0
1
2
V
DS
[V]
3
4
5
6
Fig. 4 Typical output characteristic
h
R
DS(ON)
- normalized
2.0
V
GS
= 10 V
I
D
= 160 A
p
2.5
7.5
6.0
3.0
2.5
2.0
T
J
= 125°C
5V
5.5 V
6V
6.5 V
7V
R
DS(on)
normalized
R
DS(on)
[mΩ]
1.5
1.0
0.5
0.0
-25
R
DS(on)
R
DS(on)
normalized
4.5
3.0
1.5
0.0
1.5
1.0
0.5
V
GS
=
10 V
15 V
20 V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
Fig. 5 Drain source on-state resistance R
DS(on)
versus junction temperature T
J
IXYS reserves the right to change limits, test conditions and dimensions.
T
J
[°C]
Fig. 6 Drain source on-state
resistance R
DS(on)
versus I
D
20110307i
I
D
[A]
© 2011 IXYS All rights reserved
4-6
GWM 160-0055X1
12
200
I
D
= 160 A
10
T
J
= 25°C
8
V
DS
= 12 V
180
160
140
T
J
= 175°C
V
GS
[V]
6
4
2
0
I
D
- [A]
140
160
V
DS
= 40 V
120
100
80
60
40
20
0
20
40
60
80
100
120
0
0
25
50
75
100
125
150
175
Q
G
[nC]
Fig.7 Gate charge characteristic
0.30
0.25
V
DS
= 24 V
V
GS
= +10/0 V
R
G
= 39
Ω
0.20
0.15
0.10
0.05
E
on
0.00
0
20
T
J
= 125°C
300
250
200
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
C
[°C]
Fig. 8 Drain current I
D
vs. case temperature T
C
1200
1000
800
600
t
d(off)
400
200
u
E
on
, E
rec(off)
[mJ]
E
off
[mJ]
100
50
0
100 120 140 160 180
e
E
rec(off)
x10
40
60
80
-o
t
d(on)
150
t
[ns]
E
off
0
20
40
60
80
t
f
0
100 120 140 160 180
s
I
D
[A]
I
D
[A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.4
1.2
V
DS
= 24 V
V
GS
= +10/0 V
I
D
= 160 A
T
J
= 125°C
h
a
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
t
r
t
d(on)
350
300
250
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
p
V
DS
= 24 V
V
GS
= +10/0 V
I
D
= 160 A
T
J
= 125°C
t
d(off)
1650
1500
1350
1200
1050
750
600
450
t
f
300
150
0
120
E
on
, E
rec(off)
[mJ]
1.0
0.8
0.6
0.4
0.2
0.0
t
[ns]
150
100
E
on
0
20
50
0
120
E
off
E
rec(off)
x10
40
60
80
100
20
40
60
80
100
R
G
[Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12
R
G
[Ω]
Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
20110307i
© 2011 IXYS All rights reserved
5-6
t
[ns]
200
E
off
[mJ]
900
t
[ns]
t
r
t
V
DS
= 24 V
V
GS
= +10/0 V
R
G
= 39
Ω
T
J
= 125°C
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