MDMA200P1600SA
Standard Rectifier Module
V
RRM
I
FAV
V
F
= 2x 1600 V
=
=
200 A
1.06 V
Phase leg
Part number
MDMA200P1600SA
Backside: isolated
2
3/4
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
SimBus A
●
Isolation Voltage: 4800 V~
●
Industry standard outline
●
RoHS compliant
●
Gate: Spring contacts
for solder-free PCB-mounting
●
Height: 17 mm
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140318a
© 2014 IXYS all rights reserved
MDMA200P1600SA
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
0.76
1.4
0.15
0.08
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
273
830
6.00
6.48
5.10
5.51
V
mΩ
K/W
K/W
W
kA
kA
kA
kA
min.
typ.
max. non-repetitive reverse blocking voltage
max.
1700
1600
200
15
1.13
1.33
1.06
1.32
200
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 1600 V
V
R
= 1600 V
I
F
= 200 A
I
F
= 400 A
I
F
= 200 A
I
F
= 400 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 110°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
180.0 kA²s
174.7 kA²s
130.1 kA²s
126.3 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140318a
© 2014 IXYS all rights reserved
MDMA200P1600SA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
SimBus A
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
300
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
152
3
2.5
14.0
14.0
10.0
10.0
4800
4000
5
5
Part number
M
D
M
A
200
P
1600
SA
=
=
=
=
=
=
=
=
Module
Diode
Standard Rectifier
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
SimBus A
yywwA add
XXXXXXXXX
Part Name
Date Code
Data Matrix
Ordering
Standard
Part Number
MDMA200P1600SA
Marking on Product
MDMA200P1600SA
Delivery Mode
Blister
Quantity
9
Code No.
510373
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.76
0.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140318a
© 2014 IXYS all rights reserved
MDMA200P1600SA
Outlines SimBus A
2
3/4
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140318a
© 2014 IXYS all rights reserved
MDMA200P1600SA
Rectifier
400
6000
10
6
V
R
= 0 V
300
5000
I
F
200
I
FSM
4000
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
T
VJ
= 45°C
It
10
5
2
T
VJ
= 45°C
[A]
100
[A]
T
VJ
= 150°C
3000
[A s]
T
VJ
= 150°C
2
50 Hz, 80%V
RRM
0
0.5
1.0
1.5
2000
0.001
10
4
0.01
0.1
1
1
2
2
3
4 5 6 7 8 910
V
F
[V]
Fig. 1 Forward current versus
voltage drop per diode
350
t [s]
Fig. 2 Surge overload current
vs. time per diode
350
R
thHA
=
0.08 K/W
0.10 K/W
0.20 K/W
0.40 K/W
0.60 K/W
0.80 K/W
t [ms]
Fig. 3 I t versus time per diode
300
250
DC =
1
0.5
0.4
0.33
0.17
0.08
300
250
200
DC =
1
0.5
0.4
0.33
0.17
0.08
P
tot
200
[W]
150
I
F(AV)M
150
[A]
100
50
0
0
50
100
150
200
250
0
50
100
150
100
50
0
0
50
100
150
I
F(AV)M
[A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0.16
0.14
0.12
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Z
thJC
0.10
0.08
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.006
0.035
0.079
0.030
t
i
(s)
0.0005
0.0400
0.5500
1.5000
[K/W]
0.06
0.04
0.02
0.00
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140318a
© 2014 IXYS all rights reserved
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