Freescale Semiconductor
Technical Data
Document Number: MRFE6S9046N
Rev. 0, 5/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier
applications.
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 300 mA, P
out
=
35.5 Watts CW, f = 960 MHz
Power Gain — 19 dB
Drain Efficiency — 57%
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 940 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated P
out
), Designed for Enhanced
Ruggedness
•
Typical P
out
@ 1 dB Compression Point
]
45 Watts CW
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 285 mA,
P
out
= 17.8 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 42.5%
Spectral Regrowth @ 400 kHz Offset = - 62.5 dBc
Spectral Regrowth @ 600 kHz Offset = - 72 dBc
EVM — 2.1% rms
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRFE6S9046NR1
MRFE6S9046GNR1
920 - 960 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S9046NR1
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S9046GNR1
PARTS ARE SINGLE - ENDED
RF
in
/V
GS
3
2 RF
out
/V
DS
RF
in
/V
GS
4
1 RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +66
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MRFE6S9046NR1 MRFE6S9046GNR1
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW, 28 Vdc, I
DQ
= 300 mA
Case Temperature 80°C, 18 W CW, 28 Vdc, I
DQ
= 300 mA
Symbol
R
θJC
Value
(1,2)
1.3
1.8
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 300 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
(3)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Characteristic
Power Gain
Drain Efficiency
Input Return Loss
C
rss
C
oss
C
iss
—
—
—
0.6
318
120
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2.2
3.1
0.3
3
4
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 35.5 W CW, I
DQ
= 300 mA, f = 960 MHz
Symbol
G
ps
η
D
IRL
Min
17.5
54
—
Typ
19
57
- 13
Max
—
—
-7
Unit
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRFE6S9046NR1 MRFE6S9046GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 300 mA, 920-960 MHz
Bandwidth
P
out
@ 1 dB Compression Point
IMD Symmetry @ 44 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 35.5 W CW
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ P
out
= 45 W CW
Average Group Delay @ P
out
= 45 W CW, f = 940 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 45 W CW,
f = 940 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
P1dB
IMD
sym
—
—
45
55
—
—
W
MHz
VBW
res
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
—
65
0.2
0.9
3.1
20
0.021
0.006
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
dBm/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE Reference Design Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 285 mA,
P
out
= 17.8 W Avg., 920 - 960 MHz EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
19
42.5
2.1
- 62.5
- 72
—
—
—
—
—
dB
%
% rms
dBc
dBc
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
Z7
+
C10
C5
Z9
Z6
C11
C12
V
SUPPLY
RF
INPUT
Z10
Z1
C1
C2
Z2
Z3
C4 Z4
Z5
Z11
Z12
C6
Z13
Z14
C9
Z15
RF
OUTPUT
Z8
C3
DUT
C13
C14
C7
C8
Z1
Z2
Z3
Z4
Z5
Z6*
Z7
Z8* Z9*
0.200″
0.196″
0.380″
0.321″
0.039″
0.281″
0.892″
0.751″
x 0.044″
x 0.044″
x 0.044″
x 0.450″
x 0.450″
x 0.040″
x 0.051″
x 0.040″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.040″ x 0.450″ Microstrip
0.321″ x 0.450″ Microstrip
0.080″ x 0.280″ Microstrip
0.372″ x 0.044″ Microstrip
0.124″ x 0.044″ Microstrip
0.200″ x 0.044″ Microstrip
Rogers R04350, 0.020″,
ε
r
= 3.66
* Line length includes microstrip bends
Figure 2. MRFE6S9046NR1(GNR1) Test Circuit Schematic — GSM EDGE Reference Design
Table 6. MRFE6S9046NR1(GNR1) Test Circuit Component Designations and Values — GSM EDGE Reference Design
Part
C1, C9
C2
C3, C4
C5, C11, C14
C6, C7
C8
C10, C13
C12
R1
Description
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Manufacturer
ATC
ATC
ATC
Murata
ATC
ATC
ATC
Multicomp
Vishay
MRFE6S9046NR1 MRFE6S9046GNR1
4
RF Device Data
Freescale Semiconductor
V
GS
C10
C5
R1
C12
C11
C1
C2
CUT OUT AREA
C4
C6
C8
C9
C7
C3
TO270−WB 2 GHz
Rev. 3 − Output
C13
C14
V
DS
TO270−WB 2 GHz
Rev. 3 − Input
Figure 3. MRFE6S9046NR1(GNR1) Test Circuit Component Layout — GSM EDGE Reference Design
MRFE6S9046NR1 MRFE6S9046GNR1
RF Device Data
Freescale Semiconductor
5
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