Freescale Semiconductor
Technical Data
Document Number: MRF1535N
Rev. 13, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 13.5 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Broadband - Full Power Across the Band: 135 - 175 MHz
400 - 470 MHz
450 - 520 MHz
•
200_C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1535NT1
MRF1535FNT1
520 MHz, 35 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264 - 10, STYLE 1
TO - 272 - 6 WRAP
PLASTIC
MRF1535NT1
CASE 1264A - 03, STYLE 1
TO - 272 - 6
PLASTIC
MRF1535FNT1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
6
135
0.50
- 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
0.90
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
Rating
3
Package Peak Temperature
260
Unit
°C
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF1535NT1 MRF1535FNT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 400
μA)
Drain - Source On - Voltage
(V
GS
= 5 Vdc, I
D
= 0.6 A)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
RF Characteristics
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 35 Watts, I
DQ
= 500 mA)
f = 520 MHz
f = 520 MHz
G
ps
η
—
—
13.5
55
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
—
—
—
250
150
20
pF
pF
pF
V
GS(th)
R
DS(on)
V
DS(on)
1
—
—
—
—
—
2.6
0.7
1
Vdc
Ω
Vdc
V
(BR)DSS
I
DSS
I
GSS
60
—
—
—
—
—
—
1
0.3
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
MRF1535NT1 MRF1535FNT1
2
RF Device Data
Freescale Semiconductor
V
GG
+
C11
C10
R4
R3
C23
L5
C9
R2
RF
INPUT
N1 C1
R1
Z1
L1
Z2
Z3
L2
Z4
Z5
DUT
Z6
Z7
Z8
B1
C22
+
C21
V
DD
Z9
L3
L4
Z10
RF
OUTPUT
N2
C20
C19
C2
C3
C4
C5
C6
C7
C8
C12
C13
C14
C15
C16
C17
C18
B1
C1, C9, C20, C23
C2, C5
C3, C15
C4, C6, C19
C7
C8
C10, C21
C11, C22
C12, C13
C14
C16
C17
C18
L1
L2
L3
Ferroxcube #VK200
330 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
33 pF, 100 mil Chip Capacitors
18 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
10
μF,
50 V Electrolytic Capacitors
470 pF, 100 mil Chip Capacitors
150 pF, 100 mil Chip Capacitors
110 pF, 100 mil Chip Capacitor
68 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
51 pF, 100 mil Chip Capacitor
17.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #26 AWG, 0.250″ ID
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
1 Turn, #26 AWG, 0.240″ ID
4 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
6.5
Ω,
1/4 W Chip Resistor
39
Ω
Chip Resistor (0805)
1.2 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
0.970″ x 0.080″ Microstrip
0.380″ x 0.080″ Microstrip
0.190″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.110″ x 0.200″ Microstrip
0.490″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.320″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 - 175 MHz
60
Pout , OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
50
40
30
20
10
V
DD
= 12.5 Vdc
0
0
1
2
3
4
P
in
, INPUT POWER (WATTS)
−20
10
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
155 MHz
135 MHz
175 MHz
0
−5
−10
155 MHz
135 MHz
175 MHz
−15
V
DD
= 12.5 Vdc
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss versus Output Power
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 135 - 175 MHz
19
V
DD
= 12.5 Vdc
18
17
GAIN (dB)
16
15
14
13
12
11
10
20
30
175 MHz
40
155 MHz
135 MHz
50
60
h
, DRAIN EFFICIENCY (%)
70
80
155 MHz
60
175 MHz
50
135 MHz
40
V
DD
= 12.5 Vdc
30
10
20
30
40
50
60
70
80
P
out
, OUTPUT POWER (WATTS)
P
out
, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
50
Pout , OUTPUT POWER (WATTS)
80
45
h
, DRAIN EFFICIENCY (%)
155 MHz
175 MHz
135 MHz
70
155 MHz
175 MHz
40
60
135 MHz
35
V
DD
= 12.5 Vdc
P
in
= 30 dBm
30
200
400
600
800
1000
1200
I
DQ
, BIASING CURRENT (mA)
50
V
DD
= 12.5 Vdc
P
in
= 30 dBm
40
200
400
600
800
1000
1200
I
DQ
, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
70
Pout , OUTPUT POWER (WATTS)
60
h
, DRAIN EFFICIENCY (%)
50
40
30
20
10
10
11
12
13
I
DQ
= 250 mA
P
in
= 30 dBm
14
15
175 MHz
155 MHz
135 MHz
80
70
135 MHz
175 MHz
60
155 MHz
50
I
DQ
= 250 mA
P
in
= 30 dBm
40
10
11
12
13
14
15
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1
4
RF Device Data
Freescale Semiconductor
V
GG
C14
C13
C12
+
C11
R3
R2
R1
RF
INPUT
N1 C1
Z1
Z2
Z3
Z4
C10
DUT
Z5
Z6
Z7
Z8
C25
B1
V
DD
L1
C24
C23
+
C22
Z9
C19
Z10
N2
RF
OUTPUT
C2
C3
C4
C5
C6
C7
C8
C9
C15
C16
C17
C18
C20
C21
B1
C1
C2
C3
C4
C5
C6, C7
C8, C15, C16
C9
C10, C14, C25
C11, C22
C12, C24
C13, C23
C17, C18
C19
C20
Ferroxcube VK200
160 pF, 100 mil Chip Capacitor
3 pF, 100 mil Chip Capacitor
3.6 pF, 100 mil Chip Capacitor
2.2 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
16 pF, 100 mil Chip Capacitors
27 pF, 100 mil Chip Capacitors
43 pF, 100 mil Chip Capacitor
160 pF, 100 mil Chip Capacitors
10
μF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
μF,
100 mil Chip Capacitors
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
8.2 pF, 100 mil Chip Capacitor
C21
L1
N1, N2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z8
Z6, Z7
Z9
Z10
Board
1.8 pF, 100 mil Chip Capacitor
47.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
500
Ω
Chip Resistor (0805)
1 kΩ Chip Resistor (0805)
33 kΩ, 1/8 W Chip Resistor
0.480″ x 0.080″ Microstrip
1.070″ x 0.080″ Microstrip
0.290″ x 0.080″ Microstrip
0.160″ x 0.080″ Microstrip
0.120″ x 0.080″ Microstrip
0.120″ x 0.223″ Microstrip
1.380″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils
Figure 10. 450 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 - 520 MHz
60
450 MHz
Pout , OUTPUT POWER (WATTS)
500 MHz
470 MHz
520 MHz
IRL, INPUT RETURN LOSS (dB)
50
40
30
20
10
V
DD
= 12.5 Vdc
0
0
1
2
3
4
5
6
P
in
, INPUT POWER (WATTS)
−15
0
10
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
V
DD
= 12.5 Vdc
−5
450 MHz
−10
0
470 MHz
520 MHz
500 MHz
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss versus Output Power
MRF1535NT1 MRF1535FNT1
RF Device Data
Freescale Semiconductor
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
