DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D423
BYD12 series
Controlled avalanche rectifiers
Preliminary specification
1998 Dec 03
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
handbook, halfpage
k
BYD12 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec™
(1)
technology. This package is
a
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD12D
BYD12G
BYD12J
BYD12K
BYD12M
V
R
continuous reverse voltage
BYD12D
BYD12G
BYD12J
BYD12K
BYD12M
I
F(AV)
average forward current
T
amb
= 25
°C;
printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period,
see Fig.2
t = 10 ms half sinewave;
T
j
= 25
°C
prior to surge;
V
R
= V
RRMmax
see Fig.3
−
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
0.82 A
I
FSM
non-repetitive peak forward current
−
15
A
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
I
F
= 1 A; see Fig.4
V
R
= V
RRMmax
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.5
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
CONDITIONS
BYD12 series
MAX.
1.05
1
100
V
UNIT
µA
µA
VALUE
150
UNIT
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer
≥40 µm,
pitch 5 mm; see Fig.6.
1998 Dec 03
3
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
GRAPHICAL DATA
BYD12 series
handbook, halfpage
1
MDA808
MGC736
IF(AV)
200
handbook, halfpage
Tj
( C)
150
o
(A)
0.8
0.6
100
0.4
D
50
0.2
G
J
K
M
0
0
40
80
120
160
200
Tamb (°C)
0
0
400
800
VR, V
RRM
1200
(V)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.6.
Fig.2
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.3
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
10
IF
MDA817
10
2
handbook, halfpage
IR
(µA)
10
MDA822
(A)
8
6
1
4
10
−1
2
0
0
0.5
1
1.5
VF (V)
2
10
−2
0
40
80
120
160
200
Tj (°C)
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.4
Forward current as a function of forward
voltage; typical values.
4
Fig.5
Reverse current as a function of junction
temperature; typical values.
1998 Dec 03
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYD12 series
handbook, halfpage
50
5
3
50
2
3
MBK812
Dimensions in mm.
Fig.6 Device mounted on a printed-circuit board.
1998 Dec 03
5
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