DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BYD11 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
MARKING
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
k
a
BYD11 series
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
TYPE NUMBER
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
11D
11G
11J
11K
11M
MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
V
RWM
crest working reverse voltage
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
V
R
continuous reverse voltage
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
SYMBOL
I
F(AV)
PARAMETER
average forward current
CONDITIONS
T
tp
= 55
°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 60
°C;
PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
MIN.
−
MAX.
0.50 A
UNIT
−
0.37 A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
t = 20
µs
half sinewave;
T
j
= T
j max
prior to surge
see Fig.5
−
10
A
P
RSM
T
stg
T
j
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
−
−65
−65
200
+175
+175
W
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
tzt
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 0.5 A; T
j
= T
j max
; see Fig.6
I
F
= 0.5 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
1100
−
−
−
−
−
−
−
−
−
−
−
3
14
−
−
−
−
−
1
75
−
−
V
V
V
V
V
µA
µA
µs
pF
MIN.
−
−
TYP.
−
−
MAX.
0.91
1.06
UNIT
V
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
180
250
UNIT
K/W
K/W
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG042
BYD11 series
MBG051
handbook, halfpage
0.8
handbook, halfpage
0.8
IF(AV)
(A)
0.6
IF(AV)
(A)
0.6
0.4
0.4
0.2
0.2
0
0
40
80
120
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
160
200
Ttp (
o
C)
0
0
40
80
120
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
160
200
o
C)
Tamb (
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MBG634
handbook, halfpage
0.8
MCD583
handbook, halfpage
200
P
(W)
0.6
a
=
3 2.5
2
1.57
1.42
Tj
o C)
(
0.4
100
D
0.2
G
J
K
M
0
0
0.2
0.4 I
0.6
F (AV) (A)
0
0
500
VR (V)
1000
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
MBG047
handbook, halfpage
4
3
handbook, halfpage
MCD582
10
IF
(A)
3
IR
(µA)
10
2
2
10
1
0
0
1
1
VF (V)
2
0
100
Tj ( oC)
200
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
1
handbook, halfpage
MBG025
handbook, halfpage
50
25
Cd
(pF)
7
1
50
2
10
−1
1
10
10
3
2
VR (V)
10
3
MGA200
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs
传感器
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