DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF647
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Aug 02
2001 Nov 27
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on underside eliminates DC isolators, reducing
common mode inductance
•
Designed for broadband operation (HF to 800 MHz)
•
Internal input damping for excellent stability over the
whole frequency range.
APPLICATIONS
•
Communication transmitter applications in the
HF to 800 MHz frequency range.
3
4
MBK777
BLF647
PINNING - SOT540A
PIN
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source, connected to flange
DESCRIPTION
1
2
5
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone,
class-AB
f
(MHz)
600
f
1
= 600; f
2
= 600.1
V
DS
(V)
28
28
P
L
(W)
120
120 (PEP)
Top view
Fig.1 Simplified outline.
G
p
(dB)
>14.5
>14.5
η
D
(%)
>55
>40
d
im
(dBc)
−
≤−26
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
T
mb
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
65
±15
18
290
+150
200
V
V
A
W
°C
°C
UNIT
2001 Nov 27
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
mb
= 25
°C;
P
tot
= 290 W
BLF647
VALUE
0.6
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C
per section unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
iss
C
oss
C
rss
Note
1. Capacitance values of the die only.
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 1.4 mA
V
DS
= 20 V; I
D
= 140 mA
V
GS
= 0; V
DS
= 28 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 20 V; I
D
= 4 A
V
GS
= V
GSth
+ 9 V; I
D
= 4 A
V
GS
= 0; V
DS
= 28 V; f = 1 MHz;
note 1
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
4
−
18
−
−
−
−
−
−
TYP.
−
−
−
−
−
4
160
80
43
6
MAX.
−
5.5
1.2
−
25
−
−
−
−
−
UNIT
V
V
µA
A
nA
S
mΩ
pF
pF
pF
MGW546
handbook, halfpage
100
Coss
(pF)
80
60
40
20
0
0
10
20
30
40
50
VDS (V)
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2
Output capacitance as a function of
drain-source voltage; typical values per
section.
2001 Nov 27
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th mb-h
= 0.2 K/W, unless otherwise specified.
MODE OF OPERATION
CW, class-AB
2-tone, class-AB
CW, class-AB
2-tone, class-AB
f
(MHz)
600
f
1
= 600; f
2
= 600.1
800
f
1
= 800; f
2
= 800.1
V
DS
(V)
28
28
32
32
P
L
(W)
120
120 (PEP)
150
150 (PEP)
G
p
(dB)
>14.5
>14.5
typ. 12.5
typ. 13
η
D
(%)
>55
>40
typ. 60
typ. 45
d
im
(dBc)
−
≤−26
−
typ.
−30
Ruggedness in class-AB operation
The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 28 V; f = 100 MHz at rated load power.
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances
(per section)
At f = 600 MHz, P
L
= 120 W, V
DS
= 28 V and I
DQ
= 1 A: Z
in
= 1.0 + j2.0
Ω
and Z
L
= 2.7 + j0.7
Ω.
At f = 800 MHz, P
L
= 150 W, V
DS
= 32 V and I
DQ
= 1 A: Z
in
= 1.0 + j3.8
Ω
and Z
L
= 1.8 + j0.7
Ω.
2001 Nov 27
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
Application at 600 MHz
MGW540
BLF647
MGW541
handbook, halfpage
20
80
Gp
handbook, halfpage
0
Gp
(dB)
15
η
D
(%)
60
dim
(dBc)
−20
d3
η
D
10
40
−40
d5
5
20
−60
0
0
50
100
150
PL (PEP) (W)
0
200
−80
0
50
100
150
PL (PEP) (W)
200
T
h
= 25
°C;
V
DS
= 28 V; I
DQ
= 1 A.
2-tone: f
1
= 600 MHz (−6 dB); f
2
= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
T
h
= 25
°C;
V
DS
= 28 V; I
DQ
= 1 A.
2-tone: f
1
= 600 MHz (−6 dB); f
2
= 600.1 MHz (−6 dB)
measured in 600 MHz test circuit.
Fig.3
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Fig.4
Intermodulation distortion as a function of
peak envelope output power; typical values.
MGW542
handbook, halfpage
20
80
Gp
Gp
(dB)
15
η
D
(%)
60
η
D
10
40
5
20
0
0
50
100
150
PL (W)
0
200
T
h
= 25
°C;
V
DS
= 28 V; I
DQ
= 1 A; CW, class-AB; f = 600 MHz;
measured in 600 MHz test circuit.
Fig.5
Power gain and drain efficiency as functions
of load power; typical values.
2001 Nov 27
5
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