DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D333
BY558; BY578
Damper diodes
Product specification
File under Discrete Semiconductors, SC01
1998 Jun 25
Philips Semiconductors
Product specification
Damper diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Also available with preformed leads
for easy insertion
•
Designed to withstand transients
up to 1700 V.
APPLICATIONS
•
For use in multi-sync monitor
horizontal deflection circuits
handbook, halfpage
BY558; BY578
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
k
a
MAM384
Fig.1 Simplified outline (SOD115) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
BY558
BY578
V
RRM
repetitive peak reverse voltage
BY558
BY578
V
R
I
F(AV)
continuous reverse voltage
average forward current
T
tp
= 65
°C;
see Fig.2;
PCB mounting; averaged over any
20 ms period; see Fig.4
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
−
−
−
−
1500
1700
1400
V
V
V
PARAMETER
non-repetitive peak reverse voltage
−
−
1500
1700
V
V
CONDITIONS
MIN.
MAX.
UNIT
2.5 A
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
−
−
12
80
A
A
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
1998 Jun 25
2
Philips Semiconductors
Product specification
Damper diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
t
rr
PARAMETER
forward voltage
reverse current
reverse recovery time
CONDITIONS
I
F
= 5 A; T
j
= T
j max
; see Fig.3
I
F
= 5 A; see Fig.3
V
R
= V
RRMmax
; T
j
= 150
°C
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.6
I
F
= 5 A; dI
F
/dt = 50 A/µs; see Fig.5
I
F
= 5 A; dI
F
/dt = 50 A/µs; V
F
= 5 V;
see Fig.5
I
F
= 5 A; dI
F
/dt = 50 A/µs; V
F
= 2 V;
see Fig.5
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
BY558; BY578
TYP.
−
−
−
−
MAX.
1.3 V
1.7 V
175
250
UNIT
µA
ns
V
FRM
t
fr
forward recovery voltage
forward recovery time
15
260
700
20
350
−
V
ns
ns
VALUE
20
70
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.4.
For more information please refer to the
‘General Part of Handbook SC01’.
1998 Jun 25
3
Philips Semiconductors
Product specification
Damper diodes
GRAPHICAL DATA
BY558; BY578
MGK455
handbook, halfpage
6
handbook, halfpage
10
MGK453
Ptot
(W)
4
a=
IF
(A)
3
2.5
1.
57
8
2
6
4
2
2
0
0
0
1
2
IF(AV) (A)
3
0
1
2
VF (V)
3
Fig.2
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Dotted line: T
j
= 150
°C.
Solid line: T
j
= 25
°C.
Fig.3
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
50
25
handbook, halfpage
MGK454
IF
7
50
10%
time
tfr
VF
VFRM
VF 5 V/2 V
3
time
MGA200
2
Dimensions in mm.
Fig.5
Fig.4 Device mounted on a printed-circuit board.
Forward recovery time and
voltage definition.
1998 Jun 25
4
Philips Semiconductors
Product specification
Damper diodes
BY558; BY578
handbook, full pagewidth
DUT
+
IF
(A)
0.5
1
Ω
t rr
10
Ω
25 V
50
Ω
0
0.25
0.5
IR
(A)
1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; t
r
≤
7 ns.
Source impedance: 50
Ω;
t
r
≤
15 ns.
Fig.6 Test circuit and reverse recovery time waveform and definition.
1998 Jun 25
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
