LND150
N-Channel Depletion-Mode
DMOS FET
Features
►
►
►
►
►
►
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
ISS
ESD gate protection
General Description
The LND150 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND150 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification.
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Ordering Information
Device
LND150
Package Options
TO-236AB (SOT-23)
LND150K1-G
TO-92
LND150N3-G
TO-243AA (SOT-89)
LND150N8-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(KΩ)
I
DSS
(min)
(mA)
500
1.0
1.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source
Drain-to-gate
Gate-to-source
Operating and storage temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
GATE
SOURCE
SOURCE
GATE
TO-92 (N3)
SOURCE
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
DRAIN
DRAIN
GATE
SOURCE
TO-236AB (SOT-23) (K1)
TO-243AA (SOT-89) (N8)
Product Marking
NDEW
W = Code for Week Sealed
= “Green” Packaging
Si
LN
D1 50
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
LN1EW
W = Code for Week Sealed
= “Green” Packaging
TO-236AB (SOT-23) (K1)
TO-92 (N3)
Packages may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
LND150
Thermal Characteristics
Package
TO-236AB (SOT-23)
TO-92
TO-243AA (SOT-89)
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
A
= 25
O
C
(W)
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
13
30
30
I
DRM
†
(mA)
13
30
30
30
30
30
0.36
0.74
1.6
‡
200
125
15
350
170
78
30
30
30
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics
(T
Sym
BV
DSX
V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate-to-source off voltage
Gate body leakage current
A
= 25
O
C unless otherwise specified)
Min
500
-1.0
-
-
-
-
1.0
-
-
1.0
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
850
-
2.0
7.5
2.0
0.5
0.09
0.45
0.1
1.3
-
200
Max
-
-3.0
5.0
100
100
100
3.0
1000
1.2
-
10
3.5
1.0
-
-
-
-
0.9
-
Units
V
V
nA
nA
µA
mA
Ω
%/
O
C
Ω
m
Conditions
V
GS
= -10V, I
D
= 1.0mA
V
GS
= 25V, I
D
= 100nA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= -10V, V
DS
= 450V
V
DS
= 0.8V Max Rating,
V
GS
= -10V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 0.5mA
V
GS
= 0V, I
D
= 0.5mA
V
DS
= 0V, I
D
= 1.0mA
V
GS
= -10V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0mA,
R
GEN
= 25Ω
V
GS
= -10V, I
SD
= 1.0mA
V
GS
= -10V, I
SD
= 1.0mA
Drain-to-source breakdown voltage
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature
mV/
O
C V
GS
= 25V, I
D
= 100nA
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
pF
µs
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
-10V
t
(OFF)
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
R
GEN
OUTPUT
0V
10%
90%
10%
INPUT
D.U.T.
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
LND150
Typical Performance Curves
6
Output Characteristics
V
GS
= 1.0V
6
Saturation Characteristics
V
GS
= 1.0V
5
5
I
D
(milliamps)
I
D
(milliamps)
4
0.5V
4
0.5V
3
3
2
0V
2
0V
1
-0.5V
-1.0V
500
1
-0.5V
-1.0V
0
0
250
0
0
1
2
V
DS
(V)
V
DS
(V)
3
4
5
10
Transconductance vs. Drain Current
V
DS
= 400V
2
Power Dissipation vs. Ambient Temperature
TO-243AA
8
T
A
= -55°C
G
FS
(millisiemens)
25°C
P
D
(Watts)
6
1
4
125°C
TO-92
TO-236AB
2
0
0
2
I
D
(milliamps)
4
6
8
10
0
0
25
50
T
A
(°C)
75
100
125
150
100
Maximum Rated Safe Operating Area
Pulsed
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-243AA (DC)
TO-92 (DC)
0.8
I
D
(milliamps)
10
TO-243AA
T
A
= 25°C
P
D
= 1.2W
TO-236 (DC)
0.6
0.4
TO-92
P
D
= 1.0W
T
C
= 25°C
1
T
A
= 25°C
300µs pulse
2% duty cycle
0.2
0.1
1
10
100
1000
0
0.001
0.01
V
DS
(V)
t
P
(seconds)
0.1
1.0
10
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
LND150
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
V
GS
= -5.0V
1.4
1.2
1.0
125°C
I
D
vs R
SOURCE
I
D
↓
LND1
R
SOURCE
25°C
BV
DSS
(normalized)
1.0
I
D
(milliamps)
-50
0
50
100
150
0.8
0.6
0.4
0.2
0.0
10
0.9
T
j
( C)
O
100
R
SOURCE
(Ω)
1K
10K
100K
10
Transfer Characteristics
V
DS
= 400V
1.8
V
GS(OFF)
and R
DS
Variation with Temperature
2.0
I
D
(millimeter)
25°C
5
V
GS(OFF)
(normalized)
1.6
125°C
1.4
1.2
1.2
1.0
V
GS(OFF)
@ 100nA
0.8
0.4
0
-1
0
V
GS
(V)
1
2
3
0.8
-50
0
50
100
150
T
j
( C)
O
10
Capacitance vs. Drain-to-Source Voltage
V
GS
= -10V
10
Gate Drive Dynamic Characteristics
8.7pF
C
ISS
5
V
DS
= 20V
40V
60V
C (picofarads)
5
V
GS
(V)
0
C
OSS
C
RSS
0
0
10
20
30
40
-5
0
0.1
0.2
0.3
V
DS
(V)
Q
C
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
T
A
= -55°C
1.6
R
DS(ON)
@ I
D
= 1.0mA
LND150
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E1 E
0.25
Gauge
Plane
1
e
e1
2
b
L
L1
Seating
Plane
Top View
A
View B
View B
A
A2
Seating
Plane
A1
Side View
A
View A - A
Symbol
Dimension
(mm)
MIN
NOM
MAX
A
0.89
-
1.12
A1
0.01
-
0.10
A2
0.88
0.95
1.02
b
0.30
-
0.50
D
2.80
2.90
3.04
E
2.10
-
2.64
E1
1.20
1.30
1.40
e
0.95
BSC
e1
1.90
BSC
L
0.20
†
0.50
0.60
L1
0.54
REF
θ
0
O
-
8
O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO236ABK1, Version C041309.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
