DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BY527
Controlled avalanche rectifier
Product specification
Supersedes data of April 1992
1996 Jun 11
Philips Semiconductors
Product specification
Controlled avalanche rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
BY527
Rugged glass package, using a high
temperature alloyed construction.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
crest working reverse voltage
continuous reverse voltage
average forward current
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
MAX.
1250
800
800
2.0
V
V
V
A
UNIT
T
tp
= 45
°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 80
°C;
PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
−
−
0.8
A
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
t = 10 ms half sinewave
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
−
−
−65
−65
50
20
+175
+175
A
mJ
°C
°C
1996 Jun 11
2
Philips Semiconductors
Product specification
Controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
t
rr
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
reverse current
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
V
R
= V
RWMmax
; see Fig.7
V
R
= V
RWMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
1250
−
−
−
TYP.
−
−
−
−
−
3
BY527
MAX.
0.8
1.0
−
1
150
−
V
V
V
UNIT
µA
µA
µs
C
d
−
50
−
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 Jun 11
3
Philips Semiconductors
Product specification
Controlled avalanche rectifier
GRAPHICAL DATA
MBG044
BY527
handbook, halfpage
3
handbook, halfpage
1.6
MBG054
IF(AV)
(A)
2
IF(AV)
(A)
1.2
0.8
1
0.4
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
200
160
Tamb (°C)
a = 1.57; V
R
= V
RWMmax
;
δ
= 0.5.
Lead length 10 mm.
a = 1.57; V
R
= V
RWMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC745
handbook, halfpage
4
handbook, halfpage
200
MBH393
P
(W)
3
2.5
Tj
2 1.57 1.42
(°C)
2
a=3
100
1
0
0
1
2
IF(AV) (A)
3
0
0
400
800
VR (V)
1200
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RWM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 11
4
Philips Semiconductors
Product specification
Controlled avalanche rectifier
BY527
MGC735
MGC734
handbook, halfpage
15
10
3
handbook, halfpage
IR
(µA)
10
2
IF
(A)
10
max
10
5
1
0
0
1
V (V)
F
2
10
−1
0
40
80
120
160
Tj ( C)
o
200
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RWMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MBG031
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
3
1
10
VR (V)
10
2
MGA200
1
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Jun 11
5
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