THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N03-06P
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Characteristics
b
I
SM
V
SD
I
F
= 85 A, V
GS
= 0 V
-
-
-
1
200
1.5
A
V
V
DD
= 15 V, R
L
= 0.3
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 4.5 V
V
DS
= 15 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.5
-
-
-
-
3222
563
241
25.2
9.1
9.4
1.6
10
10
26
9
4030
705
300
38
-
-
2.8
15
15
39
14
ns
nC
pF
g
fs
V
DS
= 30 V
V
DS
= 30 V, T
J
= 125 °C
V
DS
= 30 V, T
J
= 175 °C
V
DS
5
V
I
D
= 20 A
I
D
= 20 A, T
J
= 125 °C
I
D
= 20 A, T
J
= 175 °C
I
D
= 20 A
30
1.5
-
-
-
-
50
-
-
-
-
-
-
2.0
-
-
-
-
-
0.0047
-
-
0.0067
74
-
2.5
± 100
1
50
250
-
0.0060
0.0090
0.0107
0.0085
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 20 A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2198-Rev. C, 24-Sep-12
Document Number: 69061
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N03-06P
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
160
V
GS
= 10 V thru 5 V
120
120
I
D
- Drain Current (A)
100
80
60
40
20
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
15
0
T
C
= 125
°C
2
T
C
= - 55
°C
4
6
8
10
T
C
= 25
°C
140
Vishay Siliconix
V
GS
= 4 V
80
40
V
GS
= 3 V
0
I
D
- Drain Current (A)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
120
T
C
= 25
°C
g
fs
- Transconductance (S)
T
C
= - 55
°C
1.2
I
D
- Drain Current (A)
100
80
0.9
T
C
= 25
°C
60
T
C
= 125
°C
40
0.6
0.3
T
C
= 125
°C
0.0
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= - 55
°C
20
0
0
10
20
30
I
D
- Drain Current (A)
40
50
Transfer Characteristics
Transconductance
0.025
5000
R
DS(on)
- On-Resistance (Ω)
0.020
4000
0.015
C - Capacitance (pF)
C
iss
3000
0.010
V
GS
= 4.5 V
0.005
V
GS
= 10 V
0.000
0
20
40
60
I
D
- Drain Current (A)
80
100
2000
1000
C
rss
0
0
5
C
oss
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
S12-2198-Rev. C, 24-Sep-12
Document Number: 69061
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQR50N03-06P
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.5
I
D
= 20 A
2.0
V
GS
= 10 V
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 50 A
V
DS
= 15 V
6
1.5
V
GS
= 4.5 V
1.0
4
2
0
0
10
20
30
40
50
60
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.05
On-Resistance vs. Junction Temperature
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
0.04
1
T
J
= 150
°C
0.03
0.1
T
J
= - 50
°C
0.02
T
J
= 150
°C
T
J
= 25
°C
0.01
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
40
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source Voltage (V)
38
I
D
= 10 mA
- 0.3
I
D
= 5 mA
- 0.7
36
34
I
D
= 250 μA
- 1.1
32
- 1.5
- 50 - 25
0
25
50
75
100
125
150
175
30
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S12-2198-Rev. C, 24-Sep-12
Document Number: 69061
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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