AP9T15GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Capable of 2.5V gate drive
▼
Single Drive Requirement
▼
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
50mΩ
12.5A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Rating
20
±16
12.5
8
60
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
10
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200908052-1/4
AP9T15GH/J
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
10
-
-
-
5
1
2
8
55
10
3
360
70
50
1.67
Max. Units
-
-
50
80
1.5
-
1
25
±100
8
-
-
-
-
-
-
580
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=10A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±16V
I
D
=10A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=10A
R
G
=3.3Ω,V
GS
=5V
R
D
=1Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
17
9
Max. Units
1.3
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T15GH/J
50
40
T
C
=25
o
C
40
T
C
= 150
o
C
I
D
, Drain Current (A)
5.0V
4.5V
30
I
D
, Drain Current (A)
5.0V
4.5V
30
3.5V
20
20
3.5V
2.5V
10
10
2.5V
V
G
=1.5V
V
G
=1.5V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
43
I
D
= 5.2 A
T
C
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=6A
V
G
=4.5V
R
DS(ON)
(m
Ω
)
41
1.4
39
1.2
37
1.0
35
0.8
33
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
8
6
I
S
(A)
T
j
=150 C
4
o
T
j
=25 C
o
Normalized V
GS(th)
(V)
1.5
1.0
0.5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9T15GH/J
f=1.0MHz
14
1000
12
I
D
=10A
V
DS
=10V
V
DS
=12V
V
DS
=16V
C (pF)
100
V
GS
, Gate to Source Voltage (V)
C
iss
10
8
6
C
oss
C
rss
4
2
0
0
2
4
6
8
10
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
100us
10
0.2
I
D
(A)
0.1
1ms
10ms
100ms
DC
T
c
=25 C
Single Pulse
0.1
0.1
1
10
100
0.1
0.05
0.02
0.01
1
P
DM
t
T
o
Single Pulse
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
